1986
DOI: 10.1002/crat.2170210506
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Stoichiometry of Thin Layers of CuInSe2 Investigated by ESCA

Abstract: The stoichiomctry of thin epitaxial layers of CuInSe, on CaF, and GaAs substrates was determined by %he ESCA method. Substrate temperature was varied. It was found, t,hat layers of exact stoichiometry are got a t substrate temperatures around 700 K.Die Stochiometrie dunner epitaktischer Schichten von CuInSe, auf CaF,-und GaAsSubstraten wurde mit Hilfe der ESCA-Methode bestimmt. Dabei wurde die Substrattemperatur variiert. Es wurde festgestellt, daR Schichten mit exakter Sttichionietrie bei Substrattemperaturen… Show more

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