Straightforward synthesis of silicon vacancy (SiV) center-containing single-digit nanometer nanodiamonds via detonation process

Makino, Yuto; Mahiko, Tomoaki; Liu, Ming; Tsurui, Akihiko; Yoshikawa, Taro; Nagamachi, S.; Tanaka, Shigeru; Hokamoto, Kazuyuki; Ashida, Masaaki; Fujiwara, Masanori; Mizuochi, Norikazu; Nishikawa, Masahiro

doi:10.1016/j.diamond.2021.108248

Cited by 25 publications

(18 citation statements)

References 53 publications

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“…A first demonstration of DNDs containing SiV centers was recently reported by adding a silicon‐containing reagent for the detonation synthesis. [ 42 ] However, the linewidth of the observed emission peaks in this work (the smallest reported linewidth was 16.6 nm) were more than twice as broad as those of nanodiamonds synthesized by other methods such as CVD and HPHT. [ 43 ]…”

Section: Introductionmentioning

confidence: 72%

Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

Shimazaki

Kawaguchi

Takashima

et al. 2021

Physica Status Solidi (a)

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Detonation nanodiamonds (DNDs) with sizes below 10 nm have attracted attention as single photon emitters with potential in many research fields from life sciences to quantum technologies. However, while nitrogen‐vacancy (NV) color centers are found in nanodiamonds directly after the detonation synthesis without the need for irradiation or annealing, silicon‐vacancy (SiV) color centers are not present in these pristine samples. Herein, SiV centers are created in DNDs by an annealing treatment up to 1100 °C in high vacuum. As silicon is not added, the precursor of the SiV centers must be pristine silicon impurities inside the nanodiamond lattice. A sharp emission line at the wavelength of 737 nm with a linewidth of 7.7 nm is observed in DNDs that are electron irradiated before annealing. This wavelength is consistent with the characteristic emission line of SiV centers and its linewidth is comparable with that in larger nanodiamonds created by chemical vapor deposition and subsequent milling. The average lifetime (0.4 ± 0.04 ns) of the fluorescence, which is in the range of reported lifetimes in nanodiamonds, also support that the observed emission peak are due to SiV centers in DNDs.

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Section: Introductionmentioning

confidence: 72%

Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

Shimazaki

Kawaguchi

Takashima

et al. 2021

Physica Status Solidi (a)

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“…While pioneering experiments in the USSR date back to the 1960s, the disaggregation of these very strongly aggregated NDs succeeded only in the beginning of the 21st century . The isolated particles have a rather uniform size of 4–5 nm, which makes detonation nanodiamonds (DNDs) to the smallest type of NDs that are capable of hosting color defects, − which can be produced in bulk quantities. In contrast to milled HPHT NDs, which often have irregular flakelike shapes, , DNDs have uniform shapes, which are close to spheres (truncated octahedra) .…”

Section: Introductionmentioning

confidence: 99%

Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds

Shames

Terada

et al. 2022

J. Phys. Chem. C

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Nanodiamonds containing negatively charged nitrogen-vacancy (NV–) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV– formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV–-containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV– centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV– concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10–100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV– centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing, an effect related to the very small particle size. Also, the NV– concentration (in atomic ratio) in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds, which contradicts the observation that the NV– concentration generally increases with particle size. This can be explained by the 10 times higher concentration of substitutional nitrogen atoms in the studied DNDs ([NS ≈ 1000 ppm]) compared to the HPHT nanodiamonds ([NS ≈ 100 ppm]). Upon electron irradiation at a fluence of 1.5 × 1019 e–/cm2, DNDs show a 12.5-fold increment in the NV– concentration with no sign of saturation reaching 1 out of about 80 DNDs containing an NV– center. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.

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“…Assuming a Gaussian confinement function, Ager et al calculated the diamond peak shape and position for spherical NDs from 200 to 5 nm in diameter. Most of the experimental results used further for PCM development and validation for the sub-10 nm NDs were so far obtained from ∼5 nm detonation nanodiamonds (DNDs). − In recent works, however, diamond Raman line parameters (position and FWHM) were found to be size insensitive in the 2–5 nm region due to the large concentration of defects. , In contrast, high-pressure, high-temperature NDs prepared by a top-down approach are single-crystal and as such are more convenient for the size-dependent investigations than DNDs. However, isolation and accurate size distribution characterization of sub-5 nm fractions are not straightforward, mainly due to their inherently broad size distribution .…”

Section: Introductionmentioning

confidence: 99%

Nanodiamond Size from Low-Frequency Acoustic Raman Modes

et al. 2022

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Bottom-up high-pressure, high-temperature (BU_HPHT) synthesis of nanodiamonds (NDs) from organic precursors has recently enabled unprecedented control over the ND size down to the phonon confinement region (≤3 nm) of a diamond. This allows us to perform a comprehensive multiwavelength Raman spectroscopy analysis of the Raman spectra and size-related effects in BU_HPHT NDs in the size range from 1.2 to 8 nm. We present and discuss difficulties in ND size determination using the diamond 1332 cm −1 Raman line position. In contrast, we demonstrate the utilization of the low-frequency acoustic Raman modes for this purpose, namely, for quantum-sized sub-3 nm NDs. Using Lamb's model for these low-frequency acoustic modes, we calculate the ND size and find a remarkable agreement with the size values obtained by the XRD and HRTEM.

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Straightforward synthesis of silicon vacancy (SiV) center-containing single-digit nanometer nanodiamonds via detonation process

Cited by 25 publications

References 53 publications

Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds

Nanodiamond Size from Low-Frequency Acoustic Raman Modes

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