Strain and composition determination in semiconducting heterostructures by high-resolution X-ray diffraction

A Direct Real‐Time Observation of Anion Intercalation in Graphite Process and Its Fully Reversibility by SAXS/WAXS Techniques

“…[ 40 ] In the q range, we have: $$$$\begin{eqnarray}{I}_{\rm{c}} \approx 2\pi /{q}_{\rm{c}}\end{eqnarray}$$$$and the additional reflections: $$$$\begin{eqnarray}{q}_{\rm{c}} \approx m \cdot q\end{eqnarray}$$$$where q c is the peak position in the SAXS region, m is an integer equal to 1, 2, 3…, and q is the momentum transfer or scattering vector. [ 14,41 ] The peaks appear for m = 5 and 6 in the WAXS range in correspondence with the first voltage plateau at 50 mAh g −1 in Figure 2. The other integer reflections are not evident (see Figures 1 and 2).…”

“…Figures and show the results obtained by fitting the SAXS curves with a model represented by the sum of four contributions: background, microporosity (pore size < 1 µ m diameter), and two Gaussian peaks, [ 41 ] the details of the model are described below. All SAXS profiles have been fitted with the same model.…”

“…To remove the fluorescence background, it was sufficient to remove the obtained K p for all scattering curves [ 44 ] after the background subtraction, each peak, labeled as Peak1, Peak2, and Peak3, were fitted with a Gaussian function with the SASfit [ 52 ] program and the micropores were considered spherical as first approximation. The Gaussian function was chosen in order to direct calculate the strain by the formula $$\frac{{\Delta q}}{q}.$$ [ 41 ] The results of which are shown in Figure 3.…”

Tandem GaAsP/SiGe on Si solar cells

“…As the lattice constant for GaAsP varies from 5.45 to 5.65 depending on composition, this work targets a lattice constant of 5.61 with a 20% P composition to match the lattice of the 82% Ge SiGe bottom cell [22]. A TDD of 6.2 Â 10 6 cm À 2 has been previously reported for III-V layers on SiGe [21].…”

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures

“…X-ray diffraction reciprocal space mapping (XRD RSM) is a quantitative strain analysis technique. The mapping is achieved by combining the ω and ω -2 θ scan modes of XRD analysis, which can be used to determine lattice parameter change in the sample very accurately, and provide very useful strain and composition information (Yousif et al, 2001; Yamamoto et al, 2004; Ferrari & Bocchi, 2008; Shah et al, 2012). Transmission electron microscopy (TEM) offers excellent spatial resolution, and can be used to image individual dislocations in the sample in more detail (Yamamoto et al, 2004; Yuan et al, 2004).…”