Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes

Hiroyama, R.; Bessho, Y.; Kase, H.; Ikegami, T.; Honda, S.; Shono, Masayuki; Yodoshi, K.; Yamaguchi, Takao; Niina, Tatsuhiko

doi:10.1109/islc.1994.519336

Cited by 14 publications

(3 citation statements)

References 2 publications

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“…The threshold current was one-half reduced in comparison to that of DH lasers. Then, our group successfully achieved threshold current reduction of about 75% in comparison to that of DH lasers by optimizing the strain balance in the well and barrier layers in 1994 [ 66 ]. Finally, the threshold current of 630 nm band laser diodes are as low as about 20.5 mA at 20 °C [ 67 ].…”

Section: Resultsmentioning

confidence: 99%

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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Hamada

2017

Materials

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Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

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Section: Resultsmentioning

confidence: 99%

“…The threshold currents of the laser diodes are about one-half decreased in comparison to that of the strained quantum ones. Highly reliable laser diodes are also obtained by the structure [ 66 , 78 ]. The structure is applied to 1.0–1.2 µm band laser diodes for reducing the threshold current [ 79 , 80 , 81 ].…”

Section: Resultsmentioning

confidence: 99%

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Hamada

2017

Materials

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“…There are few studies on strain-compensated MQWs used for AlGaInP LDs. 8,10,12,[18][19][20] Although the strain utilized in the MQW structure of AlGaInP LDs may not be large, a high-quality crystal is important for the AlGaInP LD operation. This is particularly important for high-power and high-operationtemperature applications.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes

Huang¹,

Sun

2006

Jpn. J. Appl. Phys.

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A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5%-tensile-strain Al x Ga y In1-x-y P barrier is the optimal value for strain-compensated MQW AlGaInP LDs.

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