Strain compensation in boron-indium coimplanted laser thermal processed silicon

Clark, Mark H.; Jones, K. S.

doi:10.1063/1.1891282

Cited by 8 publications

(1 citation statement)

References 12 publications

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“…Ti was implanted at 30 keV, with three different doses: 10 15 , 5×10 15 and 10 16 cm −2 . Then, the implanted Si samples were annealed by means of the PLM method [18] to activate the Ti impurities. The PLM annealing process was performed by J P Sercel Associates Inc. (New Hampshire, USA).…”

Section: Methodsmentioning

confidence: 99%

Electronic transport properties of Ti-impurity band in Si

Olea¹,

González-Dı́az²,

Pastor³

et al. 2009

J. Phys. D: Appl. Phys.

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In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory.Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band.Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

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Section: Methodsmentioning

confidence: 99%