Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

Abstract

This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schrödinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.

Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

“…The piezoelectric potential is computed from the strain field and are included to second order following the work of Bester et al 18 and others. 19,20 Path integral quantum Monte Carlo 17,21,22 is then used to solve the system for exctions and biexcitons. This method properly treats quantum correlation-which is crucial for proper description of excitons in rings-at realistic finite temperatures with arbitrary three-dimensional confining potentials.…”