Strain Effects in p-type Devices using Full-Band Monte Carlo Simulations

Aubry-Fortuna, V.; Huet, Karim; Nghiem, Thi Thu Trang; Bournel, A.; Saint-Martin, Jérôme; Dollfus, Philippe

doi:10.5772/15524

Cited by 1 publication

(2 citation statements)

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“…At small strains and linear subsequent contributions to the conductivity the value ∂ε/∂X l does not depend on stress and according to (29) with Fermi energy at ε F > ε 2 mainly define the diminution of the longitudinal piezoresistance effect. At high temperature the effect of quantum confinement and the longitudinal piezoresistance are noticeably less (curves 2 in Figs.…”

Section: D and 1d Nanostructures (Quantum Films And Quantum Nanowires)mentioning

confidence: 96%

“…The origin of the giant piezoresistance effect was examined in numerous works [11,13,[17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Alongside with the quantum confinement [24][25][26]28] the nature of the giant piezoresistance [10,11] was explained by the following reasons: strong strain-dependence of effective masses of holes [18], strain modulation of the surface potential [20,29], interface trapping of charged carriers [11] and stress concentration regions [30]. Existence of the giant piezoresistance in nanowires [10] was contested in work [27].…”

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confidence: 99%

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Longitudinal piezoresistance and conductance of the p-type silicon nanostructures in ballistic transport regime: from bulk to nanowires

Kozlovskiy

Sharan

2012

J Comput Electron

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Longitudinal piezoresistance coefficient π l and conductance in the p-type silicon nanostructures with different dimensionality of holes D such as quantum wires D = 1, quantum films D = 2 and bulk silicon D = 3 are investigated in the ballistic transport regime. Energy spectrum of holes for the low dimensional structures was accepted in the quasi-classical approximation. Piezoresistance coefficient π l and conductance of nanostructures oriented along the [100], [110] and [111] crystallographic directions are calculated as function of temperature, concentration of holes, confining dimensions and elastic stress. The origin of the giant pezoresistance effect in the p-type silicon nanostructures at room temperature is explained by the concentration of stress in regions of the nanostructure depleted by holes. Using the only one parameter (the stress concentration factor) both qualitative and quantitative agreement was obtained between computational results and known experimental data.

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Section: D and 1d Nanostructures (Quantum Films And Quantum Nanowires)mentioning

confidence: 96%