Strain effects on the electronic and optical properties of Van der Waals heterostructure MoS2/WS2: A first-principles study

Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

“…We note that the energy of both bright and dark WSe 2 exciton are constant away from the interface but show a slight decrease when approaching the interface (≈200 nm), this could be an indication that tensile strain is present in the WSe 2 layer to account for the lattice mismatch at the junction with MoSe 2 70,71 . Scanning across the junction, the amplitude of both WSe 2 bright and dark exciton emission increases, going from zero at the interface to a plateau hundreds of nm away from the interface (see red and black stars in Fig.…”

Biaxial Strain Improving the Thermoelectric Performance of a Two-Dimensional MoS2/WS2 Heterostructure

“…Compared with the monolayer materials, the application of strain will change the interlayer distance and vdW interaction in the heterostructure, which will dramatically affect the transport performances. Farkous et al 40 calculated the influences of both uniaxial and biaxial strains on the electronic performance of the MoS 2 /WS 2 heterostructure. They found that the biaxial strain has a more significant effect.…”

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

“…4–7 In particular, when a p–n junction is formed by vertically stacking two kinds of van der Waals semiconductors, e.g. , MX 2 (M = Mo, W, Pt, Re; X = S, Se, Te)-based transition metal dichalcogenides (TMDs), 8–16 low leakage current and good rectification performance can be established due to the sharp interfaces. 17,18 For some native n-type semiconductors, including MoS 2 and ReS 2 , 19–22 chemical doping, electrostatic doping or special metal contacts have been adopted to change the carrier type from n to p-type, 23–25 namely, forming a p–n homojunction.…”

“…1 For 2D semiconductor devices, electrons move within atomically thin layer channels, 2,3 which greatly reduces the characteristic length, facilitating transistors to miniaturize to the next technology node of sub-3 nm. [4][5][6][7] In particular, when a p-n junction is formed by vertically stacking two kinds of van der Waals semiconductors, e.g., MX 2 (M = Mo, W, Pt, Re; X = S, Se, Te)-based transition metal dichalcogenides (TMDs), [8][9][10][11][12][13][14][15][16] low leakage current and good rectification performance can be established due to the sharp interfaces. 17,18 For some native n-type semiconductors, including MoS 2 and ReS 2 , [19][20][21][22] chemical doping, electrostatic doping or special metal contacts have been adopted to change the carrier type from n to p-type, [23][24][25] namely, forming a p-n homojunction.…”