Strain Engineered CaBi2Nb2O9 Thin Films with Enhanced Electrical Properties

Zhang, Yunxiang; Ouyang, Jun; Zhang, Jincan; Li, Yao; Cheng, Hongbo; Xu, Hui; Liu, Meilin; Cao, Zhao-Peng; Wang, Chunming

doi:10.1021/acsami.6b00298

Cited by 27 publications

(23 citation statements)

References 49 publications

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“…It is noted that, a much higher W rec (~69 J/cm 3 ) with a decent energy efficiency  (~82.4%) were achieved in the CBNO 350-RTA film at its maximum applicable electric field of 3.55 MV/cm. These numbers are much higher than those of the CBNO film sputtered on SRO-buffered MgO substrate at 600 ℃ (W rec  21.5 J/cm 3 and   50%) [15], and the CBNO film sputtered on SRO-buffered Pt/Ti/Si substrate at 500 ℃ (W rec  28 J/cm 3 and   62%) [20].…”

Section: Resultsmentioning

confidence: 78%

“…Compared to pseudo-equiaxial (a  b  c) perovskite ferroelectrics, such as BiFeO 3 and Pb(Zr,Ti)O 3 , the BLSFs have a highly anisotropic lattice (c  a  b). Except for a few rare cases of epitaxial c-axis or a/b-axis oriented BLSF films including Bi 4 Ti 3 O 12 [13,14] and CaBi 2 Nb 2 O 9 [15,16], most of the BLSF films were polycrystalline with (1, 1, 2n+1)-type textured grains which tilt a large angle from the c-or a/b-polar axis [17][18][19][20]. Therefore, compared with a perovskite FE film, it is more difficult to fully align the ferroelectric polarization in a BLSF film using an external electric field, leading to a relatively small remnant/saturated polarization [15,21].…”

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confidence: 99%

“…Except for a few rare cases of epitaxial c-axis or a/b-axis oriented BLSF films including Bi 4 Ti 3 O 12 [13,14] and CaBi 2 Nb 2 O 9 [15,16], most of the BLSF films were polycrystalline with (1, 1, 2n+1)-type textured grains which tilt a large angle from the c-or a/b-polar axis [17][18][19][20]. Therefore, compared with a perovskite FE film, it is more difficult to fully align the ferroelectric polarization in a BLSF film using an external electric field, leading to a relatively small remnant/saturated polarization [15,21]. On the other hand, with a large dielectric constant ( r  480) recently revealed in {1 1 2n+1} textured BLSF-type CaBi 2 Nb 2 O 9 films [20], it is possible to create a large maximum polarization, i.e., a large total electric displacement including both ferroelectric and linear dielectric parts, under a sizable electric field [22].…”

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confidence: 99%

“…As a bismuth layer-structured ferroelectric, CaBi 2 Nb 2 O 9 (CBNO) has attracted a lot of research interests due to its high Curie temperature (~943 ℃), large ferroelectric polarization (P s  24.4 C/cm 2 ), and a remarkable fatigue resistance [15,20,[23][24][25]. Our previous investigations achieved W rec  21.5 J/cm 3 and   50% in CBNO films on SRO-buffered MgO substrates [15], and W rec  28 J/cm 3 and   62% in those grown on SRObuffered Pt/Ti/Si substrates [20]. In this work, we aim at further improving the energy storage performance of the CBNO film by significantly reducing its grain size.…”

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confidence: 99%

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Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Yan

Wang²,

Wang

et al. 2021

J Adv Ceram

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CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

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Section: Resultsmentioning

confidence: 78%

mentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Yan

Wang²,

Wang

et al. 2021

J Adv Ceram

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“…Only when the two proceed in parallel can the performance of piezoelectric devices improve and the number of applies fields increase. At present, three major components related to improving the properties of raw materials, namely, domain engineering, [135,136] orientation engineering, [137,138] and strain engineering, [139][140][141] have been proposed to improve the piezoelectric properties of materials by changing the structure size of the domain, adjusting the orientation of the crystal structure, and regulating the growth and morphology of nanoparticles. Strain engineering, as an important physical parameter in additive manufacturing of piezoelectric materials, plays a crucial role in the fabrication of piezoelectric devices.…”

Section: (23 Of 29)mentioning

confidence: 99%

Additive Manufacturing of Piezoelectric Materials

Cheng

Wang

et al. 2020

Adv Funct Materials

252

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The development of energy harvesting devices can not only effectively extend the service life of electronic equipment, but also bring convenience to equipment with power supplies that cannot be changed easily. Although the existing green energy sources can provide power to electronic devices efficiently, it is difficult to apply them to micro and small electronic devices with power on the order of mW or µW because of their demanding use conditions and large power generation. For these reasons, the energy generated by mechanical vibration and human movement has become a popular energy choice for microelectronic devices. [7-10] At present, there are several ways to convert the mechanical energy generated by vibration or moving objects into the electrical energy required by electronic equipment, including electromagnetic, [11,12] electrostatic, [13,14] and piezoelectric effect. [15,16] Compared with electromagnetic and electrostatic techniques, piezoelectric materials stand out because of their high energy conversion efficiency and strong piezoelectric sensitivity. [17,18] They can directly convert the applied mechanical stress into available electrical energy and are easy to integrate into the system, thus attracting extensive attention. These materials have been applied in many fields such as piezoelectric sensors, [19,20] actuators, [21,22] ultrasonic transducers, [23,24] and energy harvesters. [25,26] From this, we can see that piezoelectric materials show great development potential for emerging functional materials and have become the focus of future research regarding renewable clean energy and advanced energy storage materials. [27] The traditional piezoelectric device is fabricated by subtractive manufacturing. This process is not only complicated, long production cycle, low utilization rate of materials, high manufacturing cost, but it also mainly employs cutting technology such as scribing, broaching, sawing, or etching for piezoelectric devices with complex geometric shapes, which greatly limits operating conditions, density and work surroundings of piezoelectric devices. In addition, the mechanical stress generated by the traditional process will cause grain loss, strength degradation,

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Introduction

Ouyang¹,

Jin²

2019

Nanostructures in Ferroelectric Films for Energy Applications

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Strain Engineered CaBi₂Nb₂O₉ Thin Films with Enhanced Electrical Properties

Cited by 27 publications

References 49 publications

Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Additive Manufacturing of Piezoelectric Materials

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