2020
DOI: 10.1007/s12274-020-2918-2
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Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Abstract: Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS 2 , MoSe 2 , WS 2 and WSe 2 . In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic propertie… Show more

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Cited by 78 publications
(99 citation statements)
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“…[7] However, the exciton peaks can be significantly redshifted due to the strain-induced reduction of bandgap in 1L MoS 2 as revealed in previous reports. [34,[36][37][38][39][40][41][42] Compared with the traditional SiO 2 /Si substrate and transparent quartz substrate, the novel Au film substrate can provide large strain, which has also been confirmed by our subsequent Raman and differential reflectance measurements. Therefore, this insignificant peak shift may be the result of the competition between the quantum confinement effect and the strain-induced bandgap engineering.…”
Section: Resultssupporting
confidence: 66%
See 1 more Smart Citation
“…[7] However, the exciton peaks can be significantly redshifted due to the strain-induced reduction of bandgap in 1L MoS 2 as revealed in previous reports. [34,[36][37][38][39][40][41][42] Compared with the traditional SiO 2 /Si substrate and transparent quartz substrate, the novel Au film substrate can provide large strain, which has also been confirmed by our subsequent Raman and differential reflectance measurements. Therefore, this insignificant peak shift may be the result of the competition between the quantum confinement effect and the strain-induced bandgap engineering.…”
Section: Resultssupporting
confidence: 66%
“…Therefore, this insignificant peak shift may be the result of the competition between the quantum confinement effect and the strain-induced bandgap engineering. In addition, it should be noted that the physical origins of the C, D, E excitons with higher energy are more complex in respect to the A and B excitons and such high energies also bring difficulties to experimental measurement to a certain extent, [36,40] which prevents them from being widely studied. Thus, it may be difficult to fully understand the influence of the novel metal substrate that can not only provide large strain but also promote interlayer charge transfer on the highfrequency dielectric response of TMDC monolayers with a strong excitonic effect.…”
Section: Resultsmentioning
confidence: 99%
“…Among the different strategies to strain engineer 2D materials, the application of uniaxial strain through bending flexible substrates with a bending jig apparatus is one of the most popular approaches. [1,11,12,[15][16][17][18] This method presents some issues when applied to 2D materials with in-plane anisotropic properties. Indeed, the effect of uniaxial strain along different crystal orientations is expected to modify the properties of these anisotropic 2Ds differently.…”
mentioning
confidence: 99%
“…Strain engineering offers another attractive strategy to tailor the physical properties of 2D materials. In an original research article, Andres Castellanos-Gomez from Consejo Superior de Investigaciones Científicas reports a systematic study on how uniaxial strain modifies the optical properties of single-, bi-and tri-layer TMDs [10]. Retaining the structural and electronic stability of 2D materials is essential for practical applications.…”
mentioning
confidence: 99%