Strain Evolution of Si_1-xGe_x Selective Epitaxial Growth in Steps

Abstract

We studied Si1-xGex epitaxial growth in steps. Epitaxial Si1-xGex films were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.