Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Morelhão, Sérgio L.; Avanci, L. H.; Freitas, Raul O.; Quivy, A. A.

doi:10.1016/j.mejo.2005.02.010

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…In addition, multi-beam diffraction, in contrast to the two-beam case, gives an opportunity to determine the phases between the interacting waves (Chang, 1984). At the same time, complex methods involving rocking curves (Morelhã o et al, 2005) and reciprocal space maps, obtained using Renninger scanning or the 2-' scanning technique (Domagała et al, 2016), would provide reliability and remove the ambiguity in identifying the causes of changes in lattice parameters in heterostructures.…”

Section: Application Of Mbxrd Calculation Proceduresmentioning

confidence: 99%

Structure diagnostics of heterostructures and multi-layered systems by X-ray multiple diffraction

et al. 2017

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This article presents the results of research on multi-layered heterostructures by a modified calculation technique of multiple X-ray diffraction. The AlxIn1−xSb heterostructure and a Zn(Mn)Se/GaAs(001) multi-layered system were used as models to specify conditions for cases of coincidental coplanar three-beam or coincidental noncoplanar four-beam X-ray diffraction. These conditions provide the means for a high-precision determination of lattice parameters and strain anisotropy in layers.

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Section: Application Of Mbxrd Calculation Proceduresmentioning

confidence: 99%

Structure diagnostics of heterostructures and multi-layered systems by X-ray multiple diffraction

et al. 2017

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Synchrotron X‐ray Renninger scanning for studying strain in InAs/GaAs quantum dot system

Freitas

Lamas

Quivy

et al. 2007

Physica Status Solidi (a)

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A systematic procedure for ultra‐precise lattice parameter determination using X‐ray Renninger scanning (XRS) is optimized and applied to probe the average in‐plane strain in series of samples representing the different stages of the growth process of single‐buried quantum dots (QDs). Covering InAs QDs growth on GaAs(001) substrates generates an expansive in‐plane strain that is related to the density of QDs. Rocking curves and atomic force microscopy are also used for a general qualitative analysis of the growths, as well as of the morphology and density of the QDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Analyzing structure factor phases in pure and doped single crystals by synchrotron X-ray Renninger scanning

et al. 2013

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X-ray multiple diffraction has been applied to study the substitutional incorporation of Mg 2+ ions into NSH crystals (nickel sulfate hexahydrate, NiSO 4 Á6H 2 O). Intensity profiles provide information on invariant phases, while angular positions of the multiple diffractions allow accurate determination of lattice parameters. By increasing the atomic disordering only of O 2À sites in model structures of doped NSH, the sense and magnitude of induced phase shifts match those necessary to justify the observed changes in the intensity profiles. Causes of disordering and lattice parameter variation are discussed. Although the amount of extra oxygen disordering is relatively large with respect to the small difference in the ionic radii of the metallic ions, this disordering is beyond the resolution power achievable by analyzing diffracted intensities of isolated reflections, such as in standard crystallographic techniques.

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Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Cited by 5 publications

References 9 publications

Structure diagnostics of heterostructures and multi-layered systems by X-ray multiple diffraction

Structure diagnostics of heterostructures and multi-layered systems by X-ray multiple diffraction

Synchrotron X‐ray Renninger scanning for studying strain in InAs/GaAs quantum dot system

Analyzing structure factor phases in pure and doped single crystals by synchrotron X-ray Renninger scanning

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