Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

Dopant-defect interactions in Ge: Density functional theory calculations

“…Intrinsic point defects such as vacancies (V) or selfinterstitials or impurities such as oxygen can have an important impact on the defect processes of any semiconductor material [22][23][24][25][26][27][28][29][30][31][32][33][34]. A number of studies concern the intrinsic defects in Ge [22][23][24][25][26][27][28].…”

Structural and optical properties of high temperature–high pressure treated Si:H

“…So the primary defect concentrations in Cz-Si:H and Cz-Si:D were distinctly different, also affecting the structural changes caused by the HT-HP treatments. Because, for the high hydrogen concentration in Si, the influence of pressure on the defect formation energy and on the corresponding defect concentration decreases, the observed influence of the HT-HP treatment on the defect structure transformation in the heavily hydrogen implanted samples is less pronounced than for Cz-Si:H prepared by implantation with small hydrogen dose but at higher energy (D = 4 × 10 16 cm −2 , E = 135 keV [1]). This is related also with the different concentration of vacancies resulting in the different primary defect structures and with the pressure dependent vacancy creation energy for the Si:H samples with various hydrogen concentrations (Fig.…”

“…Enhanced pressure results in a suppression of hydrogen out-diffusion [1]: agglomerates of vacancies and clusters can be created causing an increased X-ray diffuse scattering intensity. The treatment-induced changes of the Cz-Si:H defect structure with increasing temperature, pressure and treatment time can be explained as follows.…”

“…The defect formation in silicon implanted with hydrogen (Si:H) at comparatively low hydrogen doses (D ≤ 6 × 10 16 cm −2 ) is of interest for the smart cut technology [1]. Hydrogen implantation into Czochralski grown silicon (CzSi) with much higher hydrogen doses (D = 1× 10 17 -3 × 10 17 cm −2 ) has also become a topic of considerable interest, mainly as a mean for producing nanocrystalline silicon films [2].…”

“…The HT-HP effect on Si:H is related to the tuning of shear stress near the hydrogen-filled microcavities by pressurised ambient; the HT-HP treatment influences the defect structure of Si:H and retards the out-diffusion of hydrogen [1]. No data concerning the effect of HT-HP treatment on Si:H prepared by hydrogen implantation with high hydrogen doses (D > 2 × 10 17 cm −2 ) were published as so far.…”