Structural and optical properties of high temperature–high pressure treated Si:H

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

“…Compared to B-doped amorphous Si, this material has a higher dark conductivity, carrier mobility, doping efficiency, optical transparency, etc., due to the presence of Si crystallites embedded in the amorphous Si or Si-based matrices [8][9][10][11][12][13][14].…”

Porous‐like structures prepared by temperature‐pressure treatment of heavily hydrogenated silicon

“…High dose hydrogen implantation of Si using the immersion plasma source of ions results in a creation of hydrogenated amorphous layer just near the sample surface [8]. As evidenced by electron microscopy, the HT -HP treatment of Si:H at 720 / 920 K -1.1 GPa for 5 h resulted in the presence of two clearly recognized almost overlapping disturbed (spongy-like) buried layers, composed of numerous (hydrogenfilled) microcavities and crystallographic defects, with maximal structural disturbances at about 150 nm and 300 nm depths (corresponding to R p of H 2 + and H + , respectively) [9]. Some Si:H samples were partially out-splitted (compare Fig.…”

“…However, as it follows from the present research, enhanced HP (at some fixed HT) during the treatment of Si:H definitely affects the creation of extended and 3 -dimensional defects. The HT -HP treatment results in much less pronounced out -splitting of the near -surface layer, in the creation of numerous near -surface (hydrogen filled) micro -cavities (TEM data [9]) and of other defects (XRRSM data) as well as in more numerous dislocations (PL data). The HP -mediated (decreased) hydrogen out -diffusion and HP -dependent activity of the hydrogen -enriched area in respect of oxygen gettering from the Cz-Si bulk below R p [7] seem participate in these effects.…”