Wide-bandgap semiconductors exhibiting
a bandgap of ∼1.7–1.9
eV have generated great interest recently due to their important applications
in tandem solar cells as top cells and emerging indoor photovoltaics.
However, concerns about the stability and toxicity especially in indoor
application limit the choice of these materials. Here we report a
new member of this family, germanium monosulfide (GeS); this material
displays a wide bandgap of 1.7 eV, nontoxic and earth-abundant constituents,
and high stability. We find that the little success of GeS solar cells
to date is primarily attributed to the challenge in fabricating high-quality
polycrystalline GeS films, wherein the high thermal expansion coefficient
(α = 3.1 × 10–5 K–1) combined with high crystallization temperature (375 °C) of
GeS induces large tensile strain in the GeS film that peels off GeS
from the substrate. By introducing a high-α buffer layer between
GeS and substrate, we achieve a high-quality polycrystalline GeS thin
film that compactly adheres to substrate with no voids. Solar cells
fabricated by these GeS films show a power conversion efficiency of
1.36% under AM 1.5G illumination (100 mW cm–2).
The unencapsulated devices are stable when stored in ambient atmosphere
for 1500 h. Their efficiencies further increase to 3.6% under indoor
illumination of 1000 lux.