Strain-induced circular photogalvanic current in Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> films epitaxied on a GaAs(111)B substrate

Liang, Guoyuan; Zhai, Guijin; Ma, Jialin; Wang, Hailong; Zhao, Jianhua; Wu, Xinhui; Zhang, Xinhui

doi:10.1039/d1nr05812f

Cited by 7 publications

(8 citation statements)

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“…The single crystal nature and (112) plane of the investigated samples is identified from X-ray diffraction results as presented in our previous work. 38 The details of the growth procedure can be found in ref 39. The time-resolved reflectance (ΔR/R) experiments were performed with a standard pump−probe setup, as shown schematically in Figure 1(b).…”

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confidence: 99%

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Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate

Liang

Zhai

et al. 2022

J. Phys. Chem. Lett.

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Coherent longitudinal acoustic phonon (CAP) generation in epitaxial Dirac semimetal Cd3As2 films with different thicknesses was investigated by a time-resolved reflectance technique. The short-lived weak CAP oscillations can be observed only in the thicker Cd3As2 films, and their central frequency of 0.039 THz has no dependence on sample thickness, but is nearly inversely proportional to the probe wavelength. For the 20 nm thin film, the observed long-lived CAP with a central frequency of 0.049 THz is generated in the GaAs(111)B substrate underneath. A sound velocity of 3800 m/s for the Cd3As2 film and 5360 m/s for the GaAs(111)B substrate is thus deduced. In addition, the opposite CAP amplitude and lifetime dependence on temperature further confirms the electronic and thermal stress origination of CAP generated in GaAs(111)B and Cd3As2 film, respectively, based on the propagating strain pulse model. The central frequency of CAP is found to be stable with increasing pumping fluence and temperature, which makes Cd3As2 a potential material for thermoelectric device applications.

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“…The samples’ structure is shown in Figure (a). The single crystal nature and (112) plane of the investigated samples is identified from X-ray diffraction results as presented in our previous work . The details of the growth procedure can be found in ref .…”

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confidence: 99%

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate

Liang

Zhai

et al. 2022

J. Phys. Chem. Lett.

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“…The linear PGE (LPGE), also called shift current, is manifested as the shift in space of a charge carrier during the interband photoexcitation process under illumination by linearly polarized light, stemming from the I-symmetry breaking of the material . Berry flux fields contribute to shift current, making WSMs attractive material candidates for observing this effect. − In the circular PGE (CPGE), illumination from circularly polarized light selectively excites charge carriers with preferred linear momenta, Figure h, supporting a net photocurrent in certain symmetry groups of I-symmetry-breaking WSM or strained DSM materials. − Importantly, the excited ballistic carriers propagate with velocity v F over their mean free path …”

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confidence: 89%

Plasmon Fizeau Drag in 3D Dirac and Weyl Semimetals

Blevins,

Boriskina

2024

ACS Photonics

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There is a need for compact, dynamically tunable, nonreciprocal optical elements to enable on-chip-compatible optical isolators and more efficient radiative energy transfer systems. Plasmon Fizeau drag, the drag of an electrical current on propagating surface plasmon polaritons (SPPs), has been proposed to induce nonreciprocal surface modes to enable one-way energy transport. However, relativistic electron drift velocities are required to induce an appreciable contrast between the dispersion characteristics of copropagating and counter-propagating surface plasmon modes. The high electron drift velocity of graphene previously allowed for the experimental demonstration of current-induced nonreciprocity in a two-dimensional (2D) Dirac material. The high electron drift and Fermi velocities in three-dimensional (3D) Dirac materials make them ideal candidates for the effect; however, both the theory of the Fizeau drag effect and its experimental demonstrations in 3D Dirac materials are missing. Here, we develop a comprehensive theory of Fizeau drag in DC-biased 3D Weyl semimetals (WSMs) or Dirac semimetals (DSMs), both under local and nonlocal approximation and with dissipative losses. We predict that under practical assumptions for loss, Fizeau drag in the DSM Cd3As2 opens windows of pseudounidirectional transport. We additionally introduce new figures of merit to rank nonreciprocal plasmonic systems by their potential for directional SPP transport. Further, we propose a new approach for achieving appreciable plasmonic Fizeau drag via optically pumping bulk inversion symmetry-breaking WSMs or DSMs.

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“…The circular photo-galvanic effect (CPGE) is a technique used for manipulating spin photocurrent with circularly polarized light to fabricate novel opto-spintronic devices. 1,2 The photocurrent component, CPGE, switches based on the degree of circular polarization of the incident light. It is dependent on non-universal material specifics and has consistently been observed in systems without inversion symmetry.…”

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confidence: 99%

Recent advances in 2D TMD circular photo-galvanic effects

Aftab¹,

Iqbal²

2023

Nanoscale

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Strain-induced circular photogalvanic current in Dirac semimetal Cd₃As₂ films epitaxied on a GaAs(111)B substrate

Abstract: The Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin...

Cited by 7 publications

References 85 publications

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate

Plasmon Fizeau Drag in 3D Dirac and Weyl Semimetals

Recent advances in 2D TMD circular photo-galvanic effects

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Strain-induced circular photogalvanic current in Dirac semimetal Cd3As2 films epitaxied on a GaAs(111)B substrate

Abstract: The Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin...

Cited by 7 publications

References 85 publications

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd3As2 Film Epitaxied on GaAs(111)B Substrate

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd3As2 Film Epitaxied on GaAs(111)B Substrate

Plasmon Fizeau Drag in 3D Dirac and Weyl Semimetals

Recent advances in 2D TMD circular photo-galvanic effects

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Product

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Strain-induced circular photogalvanic current in Dirac semimetal Cd₃As₂ films epitaxied on a GaAs(111)B substrate

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate

Ultrafast Optical Probe of Coherent Acoustic Phonons in Dirac Semimetal Cd₃As₂ Film Epitaxied on GaAs(111)B Substrate