2018
DOI: 10.1103/physrevb.98.045417
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Strain-induced elastically controlled magnetic anisotropy switching in epitaxial La0.7Sr0.3MnO3 thin films on

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Cited by 28 publications
(19 citation statements)
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“…Hetero-interfaces composed of magnetically active transition metal oxides exhibit very interesting phenomena such as interfacial ferromagnetism, 1 anomalous hall-effect, 2,3 interfacial superconductivity 4 in conventional horizontal interfacial layered geometry in the form of bilayer, multilayer and superlattices. [5][6][7][8] In the recent years, epitaxial self-assembled nanocomposite thin films are found to provide a new playground to enhance the physical properties and yield new functionalities via interplay among charge, orbital and spin degrees of freedom. 9,10,11 Synthesising of self-assembled two phase vertically aligned nanocomposite (VAN) film to create new device architecture is a rather new concept to enhance and tune electronic and magnetic properties via vertical strain tuning.…”
Section: Introductionmentioning
confidence: 99%
“…Hetero-interfaces composed of magnetically active transition metal oxides exhibit very interesting phenomena such as interfacial ferromagnetism, 1 anomalous hall-effect, 2,3 interfacial superconductivity 4 in conventional horizontal interfacial layered geometry in the form of bilayer, multilayer and superlattices. [5][6][7][8] In the recent years, epitaxial self-assembled nanocomposite thin films are found to provide a new playground to enhance the physical properties and yield new functionalities via interplay among charge, orbital and spin degrees of freedom. 9,10,11 Synthesising of self-assembled two phase vertically aligned nanocomposite (VAN) film to create new device architecture is a rather new concept to enhance and tune electronic and magnetic properties via vertical strain tuning.…”
Section: Introductionmentioning
confidence: 99%
“…We relate this observations to strain effects leading to a change in the magnetic anisotropy and the exchange interaction of the LSMO layer induced by the BTO substrate. Using partially complementary methods such as angle-dependent magnetization, x-ray absorption spectroscopy and transport measurements, Panchal et al [22] concluded that strain is the decisive factor controlling magnetic anisotropy switching. Our detailed studies on the magneto-electric coupling and the depth resolved magnetization profile obtained by polarized neutron reflectometry support their conclusion and give additional insight into the microscopic mechanism of the observed effects.…”
Section: Discussionmentioning
confidence: 99%
“…The experimental verification of this prediction is the motivation for our study. Recently, BTO/LSMO systems have attracted attention for multiple reasons like ferroelectric tunneling junctions [19,20], magnetocaloric effects [21], magnetic anisotropy switching [22,23], magneto-electric coupling [24], dielectric properties [25,26] and electric field controlled magnetoresistance [27].…”
Section: Introductionmentioning
confidence: 99%
“…It changes from the paraelectric cubic phase to the ferroelectric tetragonal (T) phase at 393 K, then from the tetragonal to the orthorhombic (O) phase at 275 K, and finally to the rhombic (R) phase at 183 K. La 1– x Sr x MnO 3 as strongly correlated materials, based on their coupled charge, lattice, and spin and orbit orders, are susceptible to external stimuli, such as electric field, magnetic field, and stress. Therefore, both the BTO phase transition and its ferroelectric polarization effects have obvious influences on the magnetic and electric transport properties of the La 0.67 Sr 0.33 MnO 3 (LSMO) films. However, because of the large lattice mismatch, the ultrathin LSMO films grown on the BTO substrates show semiconducting transport behavior with the resistance increasing monotonously with decreasing temperature …”
Section: Introductionmentioning
confidence: 99%