Van der Waals heterojunctions made of 2D materials offer competitive opportunities in designing and achieving multifunctional and high‐performance electronic and optoelectronic devices. However, due to the significant reverse tunneling current in such thin p–n junctions, a low rectification ratio along with a large reverse current is often inevitable for the heterojunctions. Here, a vertically stacked van der Waals heterojunction (vdWH) tunneling device is reported consisting of black arsenic phosphorus (AsP) and indium selenide (InSe), which shows a record high reverse rectification ratio exceeding 107 along with an unusual ultralow forward current below picoampere and a high current on/off ratio over 108 simultaneously at room temperature under the proper band alignment design of both the Schottky junction and the heterojunction. Therefore, the vdWH tunneling device can function as an ultrasensitive photodetector with an ultrahigh light on/off ratio of 1 × 107, a comparable responsivity of around 1 A W−1, and a high detectivity over 1 × 1012 Jones in the visible wavelength range. Furthermore, the device exhibits a clear photovoltaic effect and shows a spectral detection capability up to 1550 nm. The work sheds light on developing future electronic and optoelectronic multifunctional devices based on the van der Waals integration of 2D materials with designed band alignment.
Spin-orbit torque (SOT) provides an ultrafast and energy-efficient means to switch magnetization, which is of fundamental and technical importance for spintronic devices. [1][2][3][4][5] A typical SOT device consists of heavy metal/ferromagnet (HM/FM) bilayer, where the HM (e.g., Pt, W, Ta, etc.) converts charge current into spin current mainly due to the spin Hall effect (SHE) and then exerts a torque on the adjacent FM enabling magnetization manipulation. To improve the energy efficiency of SOT-driven magnetization switching, considerable efforts have been made to enhance the charge-spin conversion efficiency of HM [6][7][8][9] and reduce the shunting current in the FM. [10,11] Engineering the bilayer structure [9,12] or replacing HM by novel materials with larger charge-spin conversion efficiency and higher conductivity [10,13,14] are possible avenues to realize higher SOT efficiency. Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities.Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe 2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe 2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe 2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe 2 -like TMDs for wafer-scale spintronic device applications.
The exploration of high-efficiency microwave absorption materials with lightweight and hydrophobic features is highly expected to reduce or eliminate the electromagnetic pollution. Graphene-based nanocomposites are universally acknowledged as promising candidates for absorbing microwaves due to their remarkable dielectric properties and lightweight characteristic. However, the hydrophilicity of graphene may reduce their stability and restrict the applications in moist environment. Herein, a well-designed heterostructure composed of crystalline permalloy core and amorphous iron oxide shell was uniformly adhered on oleylamine-modified graphene nanosheets by a one-pot thermal decomposition method. Compared with the recognized hydrophilic graphene-based hybrid materials, the permalloy@iron oxide/graphene nanocomposites show excellent hydrophobic and water-resistant features with a water contact angle of 136.5°. Besides, the nanocomposites show high-efficiency microwave absorption performance, benefiting from the tunneling effect, polarization, interface interaction, impedance matching condition, and synergistic effect between core–shell permalloy@iron oxide nanoparticles and graphene nanosheets. A broad effective absorption bandwidth with reflection loss (RL) value exceeding −10 dB can be obtained from 4.25 to 18 GHz, covering about 86% measured frequency range when the absorber thickness is 2.0–5.0 mm. Also, the microwave absorption performance of nanocomposites can be tuned by changing the amount of graphene. More importantly, a greatly improved microwave absorption effectiveness of −71.1 dB can be achieved for the nanocomposites in comparison with the bare permalloy@iron oxide nanoparticles (−5.6 dB) and oleylamine-modified GO nanosheets (−3.56 dB). The lightweight and hydrophobic permalloy@iron oxide/graphene nanocomposites with high-efficiency microwave absorption performance are highly promising to improve the environmental adaptability of electric devices, especially in the wet environment.
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