Strain-induced piezotronic effects in nano-sized GaN thin films

Puneetha, Peddathimula; Mallem, Siva Pratap Reddy; Lee, Young-Woong; Lee, Jung‐Hee; Shim, Jaesool

doi:10.1016/j.nanoen.2021.106305

Cited by 16 publications

(9 citation statements)

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“…Thus, the piezotronics effect, where piezoelectric polarisation charges act as a "gating" voltage to tune transmission of electrons across the surface interface or connection junction. Further experimentation with logic gates and strain-gated piezotronic transistors led to the development of more observations and conclusions, giving more confirmation to this effect [36][37][38][39][40].…”

Section: Piezotronic Effectmentioning

confidence: 93%

Piezoelectric Materials based Phototronics

Singh

2022

Materials Research Foundations

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In 2010, the fundamentals of piezo-phototronics were introduced. By applying stress, a piezo potential is formed in a non-central symmetrical crystal due to ion polarisation. Due to the co-existence of semiconductor and piezoelectricity characteristics, piezo potential induced in the crystal is of significant impact on charge transfer at the junction/interface. The phototronic product uses the piezo capability to manage carrier formation, separation, transportation, and recombination to improve the performance of optoelectronic devices such as photon detectors, solar cells and LED. Today, most of the unique applications in this field can be found in sensing, human-computer interfacing, actuating nanorobotics by effectively integrating piezo-phototronic devices and piezotronic with silicon-based CMOS technology. This chapter gives an insight into the fundamentals of piezo-phototronics.

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Section: Piezotronic Effectmentioning

confidence: 93%

Piezoelectric Materials based Phototronics

Singh

2022

Materials Research Foundations

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“…Figure e shows the strain-induced GaN thin film-based multifunctional sensors fabricated via the double-transfer method on a flexible polycarbonate substrate, where GaN thin films were exfoliated from the 2 in. GaN epitaxial wafer using the wafer-scale lift-off technique . Recently, many researchers have studied conceptually new multifunctional sensors based on the piezo-phototronic effect using a heterostructure such as InGaN/GaN (see Figure f) .…”

Section: Freestanding-membrane-based Electronicsmentioning

confidence: 99%

Freestanding Membranes for Unique Functionality in Electronics

Han

Meng

et al. 2023

ACS Appl. Electron. Mater.

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Epitaxy of single-crystalline materials laid the foundation for numerous electronics as a core technology. Nevertheless, because the single-crystalline epilayers are covalently bonded to substrates, only limited applications were explored. The recent development of layer transfer techniques has suggested another way involving the production of freestanding membranes that are free from substrates. In this review, we comprehensively catalog recent advances for freestanding-membrane-based electronics from transistors and memory storage to sensors and energy harvesters. We highlight their unique advantages, including flexibility, unique physical coupling, heterointegrability, and costeffectiveness, and summarize their challenges and perspectives.

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“…The key to fabricating strain‐gated piezotronic transistors is to find proper materials that integrate semiconductor and piezoelectric properties. Currently, 1D nanomaterials with strong tensile strain, such as ZnO, 179 GaN, 183 InN, 184 and doped PZT materials are potential candidates 178 . Among them, ZnO nanowires (NWs) material is one of the most popular material due to its mature preparation technology and high voltage properties (piezoelectric coefficient of 9.93 pm V −1 ).…”

Section: Structure‐optimized Fet For High‐quality Pressure‐dependent ...mentioning

confidence: 99%

Field effect transistor‐based tactile sensors: From sensor configurations to advanced applications

Wang

Zhang

et al. 2022

InfoMat

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The past several decades have witnessed great progress in high-performance field effect transistors (FET) as one of the most important electronic components. At the same time, due to their intrinsic advantages, such as multiparameter accessibility, excellent electric signal amplification function, and ease of large-scale manufacturing, FET as tactile sensors for flexible wearable devices, artificial intelligence, Internet of Things, and other fields to perceive external stimuli has also attracted great attention and become a significant field of general concern. More importantly, FET has a unique threeterminal structure, which enables its different components to detect external mechanics through different sensing mechanisms. On one hand, it provides an important platform to shed deep insights into the underlying mechanisms of the tactile sensors. On the other hand, these properties could in turn endow excellent components for the construction of tactile matrix sensor arrays with high quality. With special emphasis on the configuration of FETs, this review classified and summarized structure-optimized FET tactile sensors with gate, dielectric layer, semiconductor layer, and source/drain electrodes as sensing active components, respectively. The working principles and the state-of-theart protocols in terms of high-performance tactile sensors are detail discussed and highlighted, the innovative pixel distribution and integration analysis of the transistor sensor matrix array concerning flexible electronics are also introduced. We hope that the introduction of this review can provide some Jian Wang, Shuyan Xu, Congcong Zhang, and Ailing Yin contributed equally to this study.

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Strain-induced piezotronic effects in nano-sized GaN thin films

Cited by 16 publications

References 50 publications

Piezoelectric Materials based Phototronics

Piezoelectric Materials based Phototronics

Freestanding Membranes for Unique Functionality in Electronics

Field effect transistor‐based tactile sensors: From sensor configurations to advanced applications

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