Strain-Induced Spin-Resonance Shifts in Silicon Devices

Pla, Jarryd; Bienfait, Audrey; Pica, Giuseppe; Mansir, J.; Mohiyaddin, Fahd A.; Zeng, Zaiping; Niquet, Yann-Michel; Morello, Andrea; Schenkel, T.; Morton, John J. L.; Bertet, Patrice

doi:10.1103/physrevapplied.9.044014

Cited by 51 publications

(73 citation statements)

References 49 publications

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“…22. In our devices, bismuth donor spins experience large strain when cooled to low temperature because of the differential thermal expansion of Al and Si 18,23 , which leads to ESR lines much broader than both κ and the Rabi frequency 2gα in our experiments. We model this by a constant distribution ρ δ .…”

Section: Methodsmentioning

confidence: 82%

Pulsed electron spin resonance spectroscopy in the Purcell regime

Ranjan

Probst

Albanese

et al. 2020

Journal of Magnetic Resonance

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When spin relaxation is governed by spontaneous emission of a photon into the resonator used for signal detection (the Purcell effect), the relaxation time T 1 depends on the spin-resonator frequency detuning δ and coupling constant g. We analyze the consequences of this unusual dependence for the amplitude and temporal shape of a spin-echo in a number of different experimental situations. When the coupling g is distributed inhomogeneously, we find that the effective spin-echo relaxation time measured in a saturation recovery sequence strongly depends on the parameters of the detection echo. When the spin linewidth is larger than the resonator bandwidth, the Fourier components of the echo relax with different characteristic times, which implies that the temporal shape of the echo becomes dependent on the repetition time of the experiment. We provide experimental evidence of these effects with an ensemble of donor spins in silicon at millikelvin temperatures measured by a superconducting micro-resonator.

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Section: Methodsmentioning

confidence: 82%

Pulsed electron spin resonance spectroscopy in the Purcell regime

Ranjan

Probst

Albanese

et al. 2020

Journal of Magnetic Resonance

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“…The expected resonance is found around B 0 ¼ 2.8 mT [see Figs. 5(a) and 5(b)], with the 0.1-mT linewidth primarily due to strain exerted by the aluminum wire on the underlying silicon substrate [40]. The spin linewidth is considerably broader (×30) than the resonator bandwidth.…”

Section: Esr Spectroscopy In the Presence Of Squeezingmentioning

confidence: 98%

Magnetic Resonance with Squeezed Microwaves

et al. 2017

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Vacuum fluctuations of the electromagnetic field set a fundamental limit to the sensitivity of a variety of measurements, including magnetic resonance spectroscopy. We report the use of squeezed microwave fields, which are engineered quantum states of light for which fluctuations in one field quadrature are reduced below the vacuum level, to enhance the detection sensitivity of an ensemble of electronic spins at millikelvin temperatures. By shining a squeezed vacuum state on the input port of a microwave resonator containing the spins, we obtain a 1.2-dB noise reduction at the spectrometer output compared to the case of a vacuum input. This result constitutes a proof of principle of the application of quantum metrology to magnetic resonance spectroscopy.

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“…The ability to accurately model shallow dopants has taken on particular relevance in the context of quantum information science, as exemplified by the recent experiments of Pla et al 22 . They used electron spin resonance (ESR) to measure transitions between total-spin states of the coupled electron-nucleus spin degree of freedom of shallow bismuth donors in silicon, a system with applications in atomic clock transitions for silicon-based spin qubits 23,24 .…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon

Swift

Peelaers

et al. 2020

npj Comput Mater

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Spin qubits based on shallow donors in silicon are a promising quantum information technology with enormous potential scalability due to the existence of robust silicon-processing infrastructure. However, the most accurate theories of donor electronic structure lack predictive power because of their reliance on empirical fitting parameters, while predictive ab initio methods have so far been lacking in accuracy due to size of the donor wavefunction compared to typical simulation cells. We show that density functional theory with hybrid and traditional functionals working in tandem can bridge this gap. Our first-principles approach allows remarkable accuracy in binding energies (67 meV for bismuth and 54 meV for arsenic) without the use of empirical fitting. We also obtain reasonable hyperfine parameters (1263 MHz for Bi and 133 MHz for As) and superhyperfine parameters. We demonstrate the importance of a predictive model by showing that hydrostatic strain has much larger effect on the hyperfine structure than predicted by effective mass theory, and by elucidating the underlying mechanisms through symmetry analysis of the shallow donor charge density.

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Strain-Induced Spin-Resonance Shifts in Silicon Devices

Cited by 51 publications

References 49 publications

Pulsed electron spin resonance spectroscopy in the Purcell regime

Pulsed electron spin resonance spectroscopy in the Purcell regime

Magnetic Resonance with Squeezed Microwaves

First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon

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