Strain Mediated Magnetoelectric Memory

Tiercelin, Nicolas; Dusch, Yannick; Giordano, Stefano; Klimov, A. A.; Preobrazhensky, V.; Pernod, Philippe

doi:10.1002/9781118869239.ch8

Cited by 14 publications

(8 citation statements)

References 94 publications

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“…This value is close to the previously calculated one, based on the model of the effective magnetoelectric medium [13] and is much lower than E = 6 fJ/bit, recently obtained experimentally in a MTJ-RAM of comparable size [16]. The stability of the equilibrium magnetic states "0" and "1" over time is ensured by the energetic barrier , where v is the volume of the cell [11]. In the case under consideration, the long time stability of stored information at room temperature is defined by the parameter .…”

Section: Resultssupporting

confidence: 86%

“…Such a kind of structures, known as composite or artificial multiferroics, is of interest for various applications due to a strong coupling between electric and magnetic subsystems mediated by the elastic strain. In particular, the strain-mediated magneto-electric interaction is one of the most prospective principles of random-access memory that ensures ultra-low energy consumption of the devices [9][10][11]. This principle allows writing information in the magnetic subsystem as well as detecting the magnetic states by means of electric field pulses [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Strain-mediated all-magnetoelectric memory cell

et al. 2018

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Downscaling of magnetoelectric random access memory device (MELRAM) is considered by studying an example of the hybrid structure based on ferroelectric-magnetostrictive metal. Elastic mechanism of magnetoelectric interaction is analyzed by numerical modeling taking into account inhomogeneous distribution of anisotropic strain, ferroelec-tric polarization and electric field. The proposed shape of the cell allows to decrease the inhomogeneity of the strain in the magnetic subsystem and to achieve remarkable dynamic characteristics for a nanometric device sized nm 3 : we adopted an input voltage of V0=90 mV and obtained a switching time tS=1.1 ns, an output readout voltage VME=4.7 mV and an ultra-low energy consumption 13aJ/bit.

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Section: Resultssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Strain-mediated all-magnetoelectric memory cell

et al. 2018

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“…The memory cell under consideration is presented in Fig.1. The typical involved materials are a rare-earth multilayer with giant magnetostriction and uniaxial in-plane magnetic anisotropy that consists of N nano-bilayers TbCo 2 /FeCo, deposited on top of a <011> cut PMN-PT ferroelectric crystal having a polarization axis normal to the structure plane [3,4,22,23] . The details of the N×(TbCo 2 /FeCo) multilayer technology are described in Refs.…”

Section: Constitution and Mathematical Model Of The Melram Cellmentioning

confidence: 99%

Dynamics of the stress-mediated magnetoelectric memory cell N×(TbCo2/FeCo)/PMN-PT

Preobrazhensky

Klimov

Tiercelin

et al. 2018

Journal of Magnetism and Magnetic Materials

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Stress-mediated magnetoelectric heterostructures represent a very promising approach for the realization of ultra-low energy Random Access Memories. The magnetoelectric writing of information has been extensively studied in the past, but it was demontrated only recently that the magnetoelectric effect can also provide means for reading the stored information. We hereby theoretically study the dynamic behaviour of a magnetoelectric random access memory cell (MELRAM) typically composed of a magnetostrictive multilayer N × (TbCo 2 /FeCo) that is elastically coupled with a <011> PMN-PT ferroelectric crystal and placed in a Wheatstone bridge-like configuration. The numerical resolution of the LLG and electrodynamics equation system demonstrates high speed write and read operations with an associated extra-low energy consumption. In this model, the reading energy for a 50nm cell size is estimated to be less than 5 aJ/bit.

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“…The opposite will happen if the magnetostriction is negative. The illustration and switching scheme is based on [177].…”

Section: Straintronic Memorymentioning

confidence: 99%

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

et al. 2018

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The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.

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Strain Mediated Magnetoelectric Memory

Cited by 14 publications

References 94 publications

Strain-mediated all-magnetoelectric memory cell

Strain-mediated all-magnetoelectric memory cell

Dynamics of the stress-mediated magnetoelectric memory cell N×(TbCo2/FeCo)/PMN-PT

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

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