2020
DOI: 10.1103/physrevb.102.085421
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Strain modulation using defects in two-dimensional MoS2

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Cited by 15 publications
(16 citation statements)
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“…Large-scale atomic sputtering is produced in response to in-plane collisional cascades, [33] generating impactful deformation fields emanating from large defect pores. [22] These deformation fields cause local displacements of the surrounding lattice, which should alter the periodicity of the moiré patterns in bilayer MoS 2 sheets, as previously seen in twisted bilayer graphene. [34,35] We, therefore, hypothesize that damage (i.e., extended defects such as nanopores) can also be used to induce moiré superlattices and provide an avenue for controlling twist angle in vdW solids.…”
Section: Introductionmentioning
confidence: 91%
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“…Large-scale atomic sputtering is produced in response to in-plane collisional cascades, [33] generating impactful deformation fields emanating from large defect pores. [22] These deformation fields cause local displacements of the surrounding lattice, which should alter the periodicity of the moiré patterns in bilayer MoS 2 sheets, as previously seen in twisted bilayer graphene. [34,35] We, therefore, hypothesize that damage (i.e., extended defects such as nanopores) can also be used to induce moiré superlattices and provide an avenue for controlling twist angle in vdW solids.…”
Section: Introductionmentioning
confidence: 91%
“…Figure 1a displays high-angle annular dark-field (HAADF) STEM view of the enumerations of intrinsic defects in few layer 2H-MoS 2 found in the as-fabricated sheets. The order in which the defects are displayed is in order of increasing formation energy in S-rich conditions: [22,37,38] V S , V S2(c) , V S2(p) , V Mo , V MoS2 , V MoS3 , and V MoS6 . The antisite defects in few layer MoS 2 , shown in Figure S2, Supporting Information, are presented in order of most abundantly found: S ada-S , S2 Mo , and Mo S2 .…”
Section: Characterization and Formation Of Defects And Phase Transfor...mentioning
confidence: 99%
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“…The strain in defect-rich catalysts [87][88][89][90][91] is different from the lattice strain caused by the lattice-mismatch. In this case, the atom-atom bond length is affected by the defect sites nearby.…”
Section: Strain Caused By Defectsmentioning
confidence: 99%