Strain relaxation during <i>in situ</i> growth of SrTiO3 thin films

Peng, Luke S.-J.; Xi, X. X.; Moeckly, B. H.; Alpay, S. P.

doi:10.1063/1.1631055

Cited by 101 publications

(57 citation statements)

References 27 publications

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“…However, it is found that the c-lattice parameter of Ca 3 Co 4 O 9 thin films continues to increase for the heavily Agdoped samples beyond the Ag-substitution limit (as indicated in the subsequent XPS analysis). Such c-direction expansion is likely to be associated with the thin film strain relaxation [25,26]. Due to the lattice misfit from substrate, the c-axis lattice parameter of the highly oriented Ca 3 Co 4 O 9 thin films (10.73-10.79Å in this work, and 10.73-10.78Å in others [10][11][12]) is slightly lower than that of the bulk value (10.81-10.99Å [4,15,19]).…”

Section: Methodscontrasting

confidence: 46%

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Sun

Hng

Yan

et al. 2012

Journal of Alloys and Compounds

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Section: Methodscontrasting

confidence: 46%

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Sun

Hng

Yan

et al. 2012

Journal of Alloys and Compounds

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“…The films are not fully relaxed, even for the film with a thickness of 280 nm as observed in our measurement, which are quite similar to that reported by other groups. 21 In summary, a nearly linear temperature dependence of the out-of-plane lattice constant for STO films deposited on LAO substrate is observed in the temperature range of 25-300 K by in situ x-ray diffraction. The lattice strain distribution for STO on LAO along the surface normal direction is inhomogeneous, which can be divided into three sublayers with different lattice strains, i.e., the surface layer, strained layer, and interface layer.…”

mentioning

confidence: 99%

“…The results are in good agreement with both theory and other experiments. 21 The competition between the elastic restore for STO unit cell and the lattice mismatch between STO film and LAO substrate may result in the distribution of lattice strain in films.…”

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confidence: 99%

Strain distribution in epitaxial SrTiO3 thin films

Zhai

Jiang

et al. 2006

Applied Physics Letters

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The lattice strain distributions of epitaxial SrTiO 3 films deposited on LaAlO 3 were investigated by in situ x-ray diffraction at the temperature range of 25-300 K, grazing incident x-ray diffraction, and high resolution x-ray diffraction. The nearly linear temperature dependence of the out-of-plane lattice constant of SrTiO 3 was observed in the measured temperature range. The depth distribution of the lattice strain at room temperature for SrTiO 3 films includes the surface layer, strained layer, and interface layer. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2424282͔ SrTiO 3 ͑STO͒ is an incipient ferroelectric material in perovskite structure, which has been extensively studied for its application in tunable microwave devices for having a large and variable dielectric constant. 1,2 STO is also a perfect prototype to investigate phase transition, 3 especially to understand the surface and interface structural configuration for the perovskite films grown on it. 4 Although ferroelectric properties were only reported through oxygen isotope exchange ͑ST 18 O͒, 3,5 and cation substitution, 6,7 recent theories and experiments validate the existence of ferroeletricity in STO thin films under strain. [8][9][10] He et al. [11][12][13] systematically studied the structural phase transition of STO thin films under strain. Devonshire 14 predicted the shift of the ferroelectric phase transition temperature ͑T c ͒ for STO thin films due to the biaxial strain. Haeni et al. 10 reported that the room temperature ferroelectricity appears for the tensile strained STO thin films on DyScO 3 substrates, although STO crystal is incipient ferroelectric. There is little work on the observation of distribution of lattice strain along the normal of sample surface for STO thin films.In this letter, the distribution of the lattice strain of the epitaxial STO films grown on LaAlO 3 ͑LAO͒ ͑001͒ substrate by laser molecular beam epitaxy ͑MBE͒ deposition ͑L-MBE͒ is investigated. The temperature dependence of the c-direction lattice constant ͑c-T curve͒ is nearly linear, which is different from that of the bulk. The depth dependence of the lattice strain is not homogeneous, which may be due to the competition between the elastic restore and the lattice mismatch between STO film and LAO substrate.STO films were grown on LAO ͑001͒ single crystal substrate in a L-MBE system. The technique was used to deposit STO on Si in our previous studies. 15,16 Briefly, a single crystal STO target was used to grow STO film. A KrF excimer laser was used in a repetition rate of 2 Hz. The substrate was heated to 770°C. The film thicknesses were 80, 150, and 280 nm from the measurement of a Dektax 3 ST surface profile. X-ray diffraction ͑XRD͒ ͑Cu K␣ radiation͒ analysis was performed using the /2 scan mode on a Rigaku Dmax-rB and a Bruker Advanced D8 X-ray diffractometer. The depth dependence of strain, which is related to the film thickness, was determined by grazing incident x-ray diffraction ͑surface x-ray diffraction͒, which was carried out on Be...

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“…The local structure of the homoepitaxial SrTiO 3 is same as that of the bulk SrTiO 3 crystal, because the misfit strain did not exist. In SrTiO 3 /LaAlO 3 system, misfit strain relaxation does not occur until the film thickness reaches 500 -2500 Å [32]. Thus, whole the grown film was strained in the heteroepitaxial SrTiO 3 .…”

Section: Methodsmentioning

confidence: 93%

Depth-Resolved XAFS Analysis of SrTiO<sub>3</sub> Thin Film

Yoneda

Tanida

Takagaki

et al. 2010

Trans. Mat. Res. Soc. Japan

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Depth dependency of local structure of SrTiO 3 thin film was investigated by X-ray absorption fine structure (XAFS). In epitaxial thin films, a large strain exists between substrates and grown films. The expitaxial strain is the largest in the interface and it is relaxed as parting from the substrate. The lattice parameter of the grown film changes depending on the lattice strain. We performed depth-resolved XAFS measurements on SrTiO 3 thin film grown on LaAlO 3 substrate. The depth-resolved XAFS can extract the local structures around the surface and inner regions separately. It was clarified that the bond distance between Sr and O changed greatly depending on the depth. On the other hand, the bond distance between Sr and Ti unchanged.

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Strain relaxation during in situ growth of SrTiO3 thin films

Cited by 101 publications

References 27 publications

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Strain distribution in epitaxial SrTiO3 thin films

Depth-Resolved XAFS Analysis of SrTiO<sub>3</sub> Thin Film

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