Strain relaxation in semiconductor wafer bonding

Tanabe, Katsuaki

doi:10.35848/1347-4065/abf9e4

Cited by 3 publications

(3 citation statements)

References 56 publications

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“…122) In addition, nanostructural properties of other interfaces (GaAs//Si, diamond// GaN, and diamond//Cu interfaces) were improved by "low temperature" annealing (300-400 °C, 700-1000 °C, and 500-700 °C for GaAs//Si [Figs. 10(a suggest that interfaces prepared using SAB technologies are in a metastable state 123) irrespective of materials forming bonding interfaces. We have to note, however, that the period of annealing, which is between 1 min and 3 h for the junctions discussed in this article, is not long enough to precisely investigate the approach of bonding interfaces to their equilibria.…”

Section: Discussionmentioning

confidence: 99%

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Shigekawa¹,

Liang²,

Ohno

2022

Jpn. J. Appl. Phys.

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Recent achievements in research of heterojunctions fabricated using surface activated bonding (SAB), one of the practically useful direct wafer bonding technologies, are discussed. The response of bonding interfaces to post-bonding annealing is focused. These junctions reveal high thermal tolerance (1000 ○C in case of junctions made of widegap materials) despite difference in coefficients of thermal expansion between bonded materials. Defect layers with a several-nm thickness formed by the surface activation process at the as-bonded interfaces get faint and their electrical and mechanical properties are improved by annealing. These results show that as bonded interfaces are in a metastable state, and novel functional devices are likely to be realized by applying wafer processing steps to SAB-based junctions. Characteristics of III-V//Si multijunction solar cells, GaN-on-diamond high electron mobility transistors, and metal-foil based low-loss interconnects that are fabricated by processing SAB-based junctions are described, and the future prospects are presented.

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Section: Discussionmentioning

confidence: 99%

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Shigekawa¹,

Liang²,

Ohno

2022

Jpn. J. Appl. Phys.

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“…The strain relaxation process in wafer‐bonded semiconductor heterostructures was numerically investigated, relative to those formed by epitaxial growth. [ 93 ] The calculations revealed a slow strain relaxation behavior in lattice‐mismatched heterostructures wafer bonded at lower temperatures than those used in epitaxial growth. By sustaining the material system at a metastable state, the thermodynamically preferred dislocation generation is suppressed.…”

Section: Semiconductor Wafer‐bonding Technologymentioning

confidence: 99%

“…Dependence of the linear density of misfit dislocations, ρ, on the normalized temperature, T/T m , for a lattice mismatch of 0.04 for 1 h wafer bonding. Adapted with permission [93]. Copyright 2021, Institute of Physics.…”

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confidence: 99%

Semiconductor Wafer Bonding for Solar Cell Applications: A Review

Tanabe

2023

Adv Energy and Sustain Res

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Wafer bonding is a highly effective technique for integrating dissimilar semiconductor materials while suppressing the generation of crystalline defects that commonly occur during heteroepitaxial growth. This method is successfully applied to produce efficient solar cells, making it an important area of research for photovoltaic devices. In this article, a comprehensive review of semiconductor wafer‐bonding technologies is provided, focusing on their applications in solar cells. Beginning with an explanation of the thermodynamics of wafer bonding relative to heteroepitaxy, the functionalities and advantages of semiconductor wafer bonding are discussed. An overview of the history and recent developments in high‐efficiency multijunction solar cells using wafer bonding is also provided. Bonded solar cells made of various semiconductor materials are reviewed and various types of wafer‐bonding methods, including direct bonding and interlayer‐mediated bonding, are described. Additionally, other technologies that utilize wafer bonding, such as flexible cells, thin‐film transfer, and wafer reuse techniques, are covered.

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Constructing Morphotropic Phase Boundary in Epitaxial BiFeO₃ on SrTiO₃ by Suppression of Strain Relaxation

Cheng,

Hu,

Murashita

et al. 2024

Adv Funct Materials

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The strain‐driven morphotropic boundary in BiFeO3 can enhance the piezoelectric properties. However, the tetragonal phase has generally been observed in BiFeO3 films grown on substrates with intense compressive strain (more than −4.5%) within a limited thickness range (<300 nm) due to significant thickness‐dependent strain relaxation during film growth at high deposition temperatures. This work proposes suppressing thickness‐dependent strain relaxation by decreasing growth temperature. Utilizing a hydrothermal method, the growth temperature of epitaxial BiFeO3 films decreases to 200 °C. As a result, the tetragonal phase is observed in 600‐nm‐thick BiFeO3 film on (001) SrTiO3 substrates (strain equals only −1.5%), accompanied by the monoclinic phase. This SrTiO3‐available morphotropic phase boundary significantly enhances the piezoelectric response in epitaxial BiFeO3 film. Ex situ and in situ measurements, theoretical calculations, and simulation confirm that the SrTiO3‐available morphotropic phase boundary originates from the suppressed strain relaxation. Furthermore, a critical temperature (400 °C), below which the tetragonal phase can be maintained, is identified to offer an applicable strategy for extending strain‐driven morphotropic phase boundary for high‐performance piezoelectric films.

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Strain relaxation in semiconductor wafer bonding

Cited by 3 publications

References 56 publications

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Semiconductor Wafer Bonding for Solar Cell Applications: A Review

Constructing Morphotropic Phase Boundary in Epitaxial BiFeO₃ on SrTiO₃ by Suppression of Strain Relaxation

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Strain relaxation in semiconductor wafer bonding

Cited by 3 publications

References 56 publications

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Semiconductor Wafer Bonding for Solar Cell Applications: A Review

Constructing Morphotropic Phase Boundary in Epitaxial BiFeO3 on SrTiO3 by Suppression of Strain Relaxation

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Constructing Morphotropic Phase Boundary in Epitaxial BiFeO₃ on SrTiO₃ by Suppression of Strain Relaxation