Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Liu, J. P.; Li, K.; Pandey, Shesh Mani; Bénistant, F.; See, A.; Zhou, Maoqing; Hsia, L. C.; Schampers, Ruud; Klenov, Dmitri O.

doi:10.1063/1.3040323

Cited by 40 publications

(34 citation statements)

References 6 publications

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“…There is an improvement to previously published data where a value of 10 −3 is generally cited. 10,11 ͑iii͒ Between 600 and 800 nm from the surface, xx is slightly positive ͑8 ϫ 10 −4 ͒. ͑iv͒ The yy and xy profiles are not flat and equal to zero as we would expect for a biaxial stressed layer: the second SiGe/Si interface presents a slight broad bump reaching a maximum value of 5 ϫ 10 −3 .…”

Section: Improved Precision In Strain Measurement Using Nanobeam Elecmentioning

confidence: 97%

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Improved precision in strain measurement using nanobeam electron diffraction

Béché¹,

Rouvière²,

Clément³

et al. 2009

Applied Physics Letters

166

101

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Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a ⟨110⟩ zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6×10−4 using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained.

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Section: Improved Precision In Strain Measurement Using Nanobeam Elecmentioning

confidence: 97%

“…This result reveals an almost four times improvement in the probe diameter compared to literature in which 10 m or smaller apertures are used. [10][11][12] As displayed in Fig. 2͑a͒, images of the sample can be realized using a high angle annular dark field ͑HAADF͒ detector.…”

Section: Improved Precision In Strain Measurement Using Nanobeam Elecmentioning

confidence: 99%

Improved precision in strain measurement using nanobeam electron diffraction

Béché¹,

Rouvière²,

Clément³

et al. 2009

Applied Physics Letters

166

101

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“…Except for nanobeam diffraction~NBD! experiments~Usuda et al, 2005;Armigliato et al, 2008;Liu et al, 2008;Béché et al, 2009;Favia et al, 2011! or, more precisely, all techniques that exploit the position of Bragg beams, both classes of methods based either on the measurement of Bragg beam phases or on evaluation of HOLZ line intersections can suffer from strong variations of crystallographic orientation.…”

Section: Discussionmentioning

confidence: 99%

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

et al. 2012

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This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of~circular! pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very different as one is based on edge detection, one on rotational averages, and one on cross correlation with masks, it is found that identical strain profiles result for an In x Ga 1Ϫx N y As 1Ϫy /GaAs heterostructure consisting of five compressively and tensile strained layers. We achieve a precision of strain measurements of 7-9{10 Ϫ4 and a spatial resolution of 0.5-0.7 nm over the whole width of the layer stack which was 350 nm. Being already very applicable to strain measurements in contemporary nanostructures, we additionally suggest future hardware and software designs optimized for fast and direct acquisition of strain distributions, motivated by the present studies.

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“…The enhanced electron and hole mobility of strained Si and strained Si 1-x Ge x /Si makes them very attractive as candidate materials for high performance semiconductor devices, such as high speed CMOS and HBT devices [1][2][3][4][5][6]. The thickness of a Si 1-x Ge x layer, its Ge content and crystallinity of the Si 1-x Ge x /Si determine the amount of strain and the enhancement of the carrier transport properties.…”

Section: Introductionmentioning

confidence: 99%

Non-contact, non-destructive characterization of Ge content and SiGe layer thickness using multi-wavelength Raman spectroscopy

Yoo

Ueda

Ishigaki

et al. 2009

2009 17th International Conference on Advanced Thermal Processing of Semiconductors

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Design and performance of a newly developed multi-wavelength, micro Raman spectroscopy system for non-contact and non-destructive characterization of semiconductor materials are introduced. The thickness and Ge content of Si 1-x Ge x /Si were estimated from the multiwavelength Raman measurement results and compared to those values obtained from X-ray diffraction (XRD) and Xray reflectance (XRR) measurements for cross-reference. Both the thickness and Ge content of Si 1-x Ge x /Si measured by Raman spectroscopy and X-ray techniques are in excellent agreement. In addition to the non-contact and nondestructive nature of Raman spectroscopy, the multiwavelength excitation capability of the system, with high spectral and spatial resolution, are very attractive and powerful for characterization of advanced semiconductor materials, such as Si 1-x Ge x /Si and strained Si, and process optimization.978-1-4244-3815-0/09/$25.00 ©IEEE

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Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Cited by 40 publications

References 6 publications

Improved precision in strain measurement using nanobeam electron diffraction

Improved precision in strain measurement using nanobeam electron diffraction

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

Non-contact, non-destructive characterization of Ge content and SiGe layer thickness using multi-wavelength Raman spectroscopy

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