We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si͑001͒. Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

In this letter, we report on the synthesis of a third phase of Ti disilicide, the C40 TiSi2 on Si substrate with pulsed laser annealing. This is achieved without doping the samples with foreign metals. We also show that with this C40 TiSi2, the technologically important C54 TiSi2 is achieved directly, completely bypassing the undesirable C49 phase. The C40 phase was identified using convergent beam electron diffraction. Raman spectrum of pure C40 TiSi2 was also obtained. The synthesis of the C40 phase without the additional refractory metal and its promotion effect on the C54 phase formation has important implications for the integrated circuit industry in 0.13 μm technology and beyond.