2010
DOI: 10.1063/1.3380528
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Strain relaxation of epitaxial (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films grown on SrTiO3 substrates by pulsed laser deposition

Abstract: High crystalline quality (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 (BSTZ) thin films were epitaxially grown by pulsed laser deposition on (001) SrTiO3 single crystal substrates. Their epitaxial nature was revealed by x-ray and electron diffraction. Thinnest film (∼9 nm) has largest out-of-plane lattice constant (4.135 Å) and tetragonality (1.06). Films are under compressive strain. Film thicknesses above ∼9 nm were started to relax as revealed from reciprocal space mapping. Thicknesses deduced from x-ray diffraction and tran… Show more

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Cited by 2 publications
(7 citation statements)
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“…In this work, we deposited Cr 2 O 3 and α-Fe 2 O 3 by using radio frequency (RF) magnetron sputtering at high temperature from 2 Cr and Fe sputtering targets, respectively, on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) Al 2 O 3 (A-plane sapphire) substrates in the presence of both oxygen and argon. Initially, we varied the oxygen flow rate from 1.0 to 5.0 sccm while keeping the argon flow rate at 70 sccm and the chamber pressure at 3 mTorr.…”
Section: Deposition Methods and Characterizationsmentioning
confidence: 99%
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“…In this work, we deposited Cr 2 O 3 and α-Fe 2 O 3 by using radio frequency (RF) magnetron sputtering at high temperature from 2 Cr and Fe sputtering targets, respectively, on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) Al 2 O 3 (A-plane sapphire) substrates in the presence of both oxygen and argon. Initially, we varied the oxygen flow rate from 1.0 to 5.0 sccm while keeping the argon flow rate at 70 sccm and the chamber pressure at 3 mTorr.…”
Section: Deposition Methods and Characterizationsmentioning
confidence: 99%
“…After the deposition, the films were annealed at 700 • C for one hour at 2 mTorr in the presence of oxygen at 1 mTorr. XRD θ-2θ patterns of film in Figure 1a show the peak at 2θ = 36.02 • , which comes from the Cr 2 O 3 [11][12][13][14][15][16][17][18][19][20] Bragg reflection corresponding to the corundum structure. The peak at 37.8 • is the [11][12][13][14][15][16][17][18][19][20] Al 2 O 3 substrate peak.…”
Section: Crystal Structures Of Epitaxial Oxide Filmsmentioning
confidence: 99%
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