Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet

Wang, Yu; Wang, Cong; Liang, Shi‐Jun; Ma, Zecheng; Xu, Kang; Liu, Xiaowei; Zhang, Lili; Admasu, Alemayehu S.; Cheong, Sang‐Wook; Wang, Lizheng; Chen, Moyu; Liu, Zenglin; Cheng, Bin; Ji, Wei; Miao, Feng

doi:10.1002/adma.202004533

Cited by 153 publications

(138 citation statements)

References 63 publications

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“…Due to the ultrathin thickness and weak interlayer vdW interaction of 2D magnetic materials, their magnetic properties, such as Curie temperature, magnetic anisotropy, saturation magnetization, and coercive force can be effectively modulated by magnetic field 1 , electric field 22 , strain 23 , electrostatic doping 11,[24][25][26][27] , and ion intercalation 28 , etc. Several studies have demonstrated the carrier doping dependent changes in magnetic properties of CrI 3 24 , Cr 2 Ge 2 Te 6 26,28 , and Fe 3 GeTe 2 11 , which are attributed to carrier doping induced change on exchange interaction due to orbital occupation of transition metal atoms in these materials.…”

Section: Introductionmentioning

confidence: 99%

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

Zheng

Wang

et al. 2021

Preprint

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How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their zero net magnetization. In this work, we found electron doping dependent variation of magnetic orders of a two-dimensional (2D) AFM insulator NiPS3, where doping concentration is tuned by intercalating various organic cations into the van der Waals gaps of NiPS3 without introduction of defects and impurity phases. The doped NiPS3 shows an AFM-ferrimagnetic (FIM) transition at doping level of 0.2-0.5 electrons/cell and a FIM-AFM transition at doping level of ≥0.6 electrons/cell. We propose that the found phenomenon is due to competition between Stoner exchange dominated inter-chain ferromagnetic order and super-exchange dominated inter-chain AFM order at different doping level. Our studies provide a viable way to exploit correlation between electronic structures and magnetic properties of 2D magnetic materials for realization of magnetoelectric effect.

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Section: Introductionmentioning

confidence: 99%

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

Zheng

Wang

et al. 2021

Preprint

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“…Until 2017, intrinsic 2D magnetism was experimentally achieved in atomically thin layers of CrI 3 9 and Cr 2 Ge 2 Te 6 , 10 showing that the long‐range magnetic ordering can be stabilized by magnetic anisotropy with an excitation gap opening. Subsequently, studies have revealed exotic magnetic properties in several other 2D materials, for example, Fe 3 GeTe 2 , 11 FePS 3 , 12 and MnSe 2, 13 which are tunable with the layer thickness, 9,14 electric field, 15,16 strain, 17–19 light, 20 and so on. These properties offer attractive opportunities to explore emergent phenomena in these materials and their heterostructures, including the quantum Hall effect, quantum spin Hall effect, quantum spin liquids, and the fractionalization of quasiparticles 4 .…”

Section: Introductionmentioning

confidence: 99%

Two‐dimensional magnetic transition metal chalcogenides

2021

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The field of two‐dimensional (2D) magnets has expanded rapidly during the past several years since the first demonstration of intrinsic 2D magnetism in atomically thin CrI3 and Cr2Ge2Te6 in 2017. 2D transition metal chalcogenides (TMCs), a class of strongly correlated materials, have exhibited a wide variety of novel electronic and optical properties, and more recently magnetism. Here, we review recent experimental progress achieved in the growth of 2D magnetic TMC materials using chemical vapor deposition and molecular beam epitaxy methods. Outstanding examples include the demonstration of room temperature intrinsic and extrinsic ferromagnetism in monolayer VSe2, MnSe2, Cr3Te4, V‐doped WSe2, and so on. A brief discussion on the origin of the exotic magnetic properties and emergent phenomena is also presented. Finally, we summarize the remaining challenges and future perspective on the development of 2D magnetic materials for next‐generation spintronic devices.

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“…To satisfy the different requirements of spintronic devices, great effort has been devoted to modulating the magnetism of 2D materials for enriching the 2D magnetic material family. [13][14][15] The magnetism control can be realized by external stimuli, such as mechanical stress, [16] pressure, [17] and electric field. [18] For example, T C of Cr 2 Ge 2 Te 6 can be increased by more than 140 K and its magnetic easy axis can be changed from out of plane to in plane by electrostatic gating.…”

Section: Introductionmentioning

confidence: 99%

Structure Engineering of 2D Materials toward Magnetism Modulation

Zhao

Zeng

et al. 2021

Small Structures

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2D magnetic materials have shown great potentials in fundamental research and spintronic devices. However, the discovered 2D magnetic materials are still limited and their monotonous magnetic properties cannot meet the needs of practical applications. Recently, the modulation of magnetism in 2D materials attracted tremendous attention, which can enrich the 2D magnetic material family and extend their application prospects. Structure engineering is one of the most effective ways to realize tunable 2D magnetic properties. Herein, the recent progress on 2D magnetism modulation via structure engineering is summarized. The basic theory of 2D magnetism is introduced at first. Then, the magnetism modulation by structure engineering is classified into two ways: inducing longrange magnetic ordering into nonmagnetic materials and regulating the native magnetism of intrinsic magnetic materials. Moreover, recent progress on magnetism modulation by intercalation, chemical doping, defect engineering, and heterostructure construction is discussed in detail. Finally, the challenges and prospects in the future of 2D magnetism are also provided.

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Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet

Abstract: Van der Waals (vdW) magnetic materials, including CrI 3 , Cr 2 Ge 2 Te 6 , and Fe 3 GeTe 2 , etc., have attracted much attention over the past few years for offering a platform to explore new fundamental physics and novel device applications. [1-8] Layered

Cited by 153 publications

References 63 publications

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

Two‐dimensional magnetic transition metal chalcogenides

Structure Engineering of 2D Materials toward Magnetism Modulation

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