Strain stabilization of far from equilibrium GaAsBi films

Stevens, Margaret A.; Grossklaus, Kevin A.; Vandervelde, Thomas E.

doi:10.1016/j.jcrysgro.2019.125216

Cited by 14 publications

(12 citation statements)

References 24 publications

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“…Select samples, shown as black icons, were grown lattice matched to partially relaxed InGaAs buffer layers. This prevents significant strain relaxation at higher Bi concentrations and also prevents droplet induced phase separation due to Bi saturation [31]. A test sample with a concentration of x = 0.02 shows the mobility of n-type samples grown under small levels of compressive strain on GaAs and lattice matched to InGaAs underlayers were nearly the same.…”

Section: Resultsmentioning

confidence: 99%

“…These droplets can be Bi, Ga, or bi-metallic depending on the growth conditions used [44,45]. While ideally these droplets should be avoided to prevent phase separation from occurring in the films [31,46], many bismide films with high Bi incorporation at device-relevant thicknesses also have these droplets present [30]. Therefore, it is important to understand the effect their presence has on the dopant incorporation.…”

Section: Resultsmentioning

confidence: 99%

“…The only difference was the choice of underlayer: GaAs or InGaAs with composition chosen to lattice match the GaAsBi. The choice of underlayer determined whether or not droplets were present on the growth surface, as the presence of a partially relaxed InGaAs underlayer been shown to prevent Bi rejection [31]. Figure 5 shows Nomarski images and the resulting Hall data from these samples.…”

Section: Resultsmentioning

confidence: 99%

“…For GaAsBi samples grown on GaAs, the buffer layer was 500 nm of UID GaAs grown at 580 ± 5 • C with a (2 × 4) surface reconstruction. For samples grown on partially relaxed InGaAs underlayers, used to lattice match the GaAsBi alloy and prevent Bi rejection under high compressive strain [31], 100 nm of GaAs was first grown at 580 ± 5 • C before 500 nm of InGaAs was grown at 475 ± 5 • C with a (4 × 3) surface reconstruction. The In x Ga 1-x As composition was chosen to lattice match the capping GaAsBi layer.…”

Section: Methodsmentioning

confidence: 99%

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Characterization of tellurium and silicon as n-type dopants for GaAsBi

Stevens

Lenney

McElearney

et al. 2020

Semicond. Sci. Technol.

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Films of n-GaAs1-xBix films were grown via molecular beam epitaxy using both Si and Te as dopant sources. Electron mobility was characterized by Hall effect measurements as a function of carrier concentration and Bi content for films with bismuth fractions of x = 0.02 and x = 0.06. While GaAsBi:Te shows lower majority carrier mobility than GaAsBi:Si at low Bi concentrations, the two become comparable as Bi content increases. Furthermore, it was observed that in the presence of bi-metallic Bi-Ga droplets on the film surface, films doped with Si display p-type behavior, likely due to Si preferentially occupying group-V sites. The use of Te as a dopant always resulted in n-type epilayers, making it a more reliable dopant choice for high Bi content films. Finally, ex situ annealing was studied as a method to improve majority carrier mobility in GaAs0.98Bi0.02:Te films, with a 10 min anneal at 350 °C resulting in a 30% improvement in electron mobility. Improvement of film quality was confirmed through spectroscopic ellipsometry examination of film optical properties. Annealing at higher temperatures resulted in electrical, optical, and structural degradation of the GaAsBi films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Characterization of tellurium and silicon as n-type dopants for GaAsBi

Stevens

Lenney

McElearney

et al. 2020

Semicond. Sci. Technol.

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“…В настоящее время технология получения эпитаксиальных слоев LT-GaAs 1−x Bi x методом МЛЭ еще только разрабатывается, о чем свидетельствует большое число публикаций, в которых рассматриваются как модели эпитаксиального роста, так и конкретные режимы и условия эпитаксиального процесса [13][14][15][16][17][18][19].…”

Section: Introductionunclassified

Выращивание слоев GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- методом молекулярно-лучевой эпитаксии

Семягин¹,

Колесников²,

Путято³

et al. 2022

Физика И Техника Полупроводников

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Determination of the Complex Refractive Index of GaSb_1−xBi_xby Variable‐Angle Spectroscopic Ellipsometry

McElearney,

Grossklaus,

Menasuta

et al. 2024

Physica Status Solidi (a)

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Variable‐angle spectroscopic ellipsometry is used to determine the room temperature complex refractive index of molecular beam epitaxy grown GaSb1−xBix films with x ≤ 4.25% over a spectral range of 0.47–6.2 eV. By correlating to critical points in the extinction coefficient k, the energies of several interband transitions are extracted as functions of Bi content. The observed change in the fundamental bandgap energy (E0, −36.5 meV per %Bi) agrees well with previously published values; however, the samples examined here show a much more rapid increase in the spin‐orbit splitting energy (Δ0, +30.1 meV per Bi) than previous calculations have predicted. As in the related GaAsBi, the energy of transitions involving the top of the valence band are observed to have a much stronger dependence on Bi content than those that do not, suggesting the valence band maximum is most sensitive to Bi alloying. Finally, the effects of surface droplets on both the complex refractive index and the critical point energies are examined.

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Strain stabilization of far from equilibrium GaAsBi films

Cited by 14 publications

References 24 publications

Characterization of tellurium and silicon as n-type dopants for GaAsBi

Characterization of tellurium and silicon as n-type dopants for GaAsBi

Выращивание слоев GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- методом молекулярно-лучевой эпитаксии

Determination of the Complex Refractive Index of GaSb_1−xBi_xby Variable‐Angle Spectroscopic Ellipsometry

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Strain stabilization of far from equilibrium GaAsBi films

Cited by 14 publications

References 24 publications

Characterization of tellurium and silicon as n-type dopants for GaAsBi

Characterization of tellurium and silicon as n-type dopants for GaAsBi

Выращивание слоев GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- методом молекулярно-лучевой эпитаксии

Determination of the Complex Refractive Index of GaSb1−xBixby Variable‐Angle Spectroscopic Ellipsometry

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Determination of the Complex Refractive Index of GaSb_1−xBi_xby Variable‐Angle Spectroscopic Ellipsometry