Strained endotaxial nanostructures with high thermoelectric figure of merit

Biswas, Kanishka; He, Jiaqing; Zhang, Qichun; Wang, Guoyu; Uher, Ctirad; Dravid, Vinayak P.; Kanatzidis, Mercouri G.

doi:10.1038/nchem.955

Cited by 957 publications

(819 citation statements)

References 32 publications

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“…3 4 However, they cannot be used for high volume applications, so nanostructuring should be utilized in bulk materials. A large number of recent studies [5][6][7][8][9][10] have focused on the so-called mid-range temperature (600-900 K) thermoelectric materials and specifically PbTe, where the majority of broad-based applications benefit. Recent studies 7-9 11 12 have improved PbTe thermoelectric performance significantly through tuning the electronic structure and/or nanostructuring of bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

et al. 2014

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PbTe is a premiere mid-range temperature thermoelectric material and recent studies have proven nanostructing as an effective approach to reduce thermal conductivity of alloys. Whereas, little attention has been given to long-term thermal stability of secondary phases and microstructural evolution. Interestingly, replacing Te with S in PbTe provides an opportunity to form nanostructures in the bulk material through spinodal decomposition, which appears in binary phase diagrams of the PbTe-PbS system. Herein, the critical composition of PbTe 0.38 S 0.62 alloy is fabricated to n-type by chlorine doping. Thermoelectric transport properties of the alloy are investigated in the 300-850 K temperature range and the maximum zT achieved at 800 K is 0.75 with a predicted zT ∼ 0.85 at 750 K from single parabolic band model. The microstructure of the sintered samples was studied by FEG-SEM for both the as sintered and post transport properties measurement. The experimental results are compared with estimates from the parallel and series models for heterogeneous composites of single phase PbTe and PbS. The Seebeck coefficient is in agreement with the models predictions, but the resistivity is higher and the thermal conductivity is much lower than predicted values. We propose that this is attributed to the phonon and electron scattering on solute atoms in solid solutions and at interfaces.

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Section: Introductionmentioning

confidence: 99%

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

et al. 2014

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“…In addition, thin-film thermoelectric materials possess favorable features not exhibited by bulk materials. The presence of nanostructured materials, including superlattices [20][21][22], nanocrystals [23][24][25], nanoporous structures [26][27][28], and inducing stresses [29][30][31], enhances thermoelectric performance. Thermoelectric performance is defined as the figure of merit, ZT = S 2 σT/κ, where S is the Seebeck coefficient, σ is electrical conductivity, T is the absolute temperature, and κ is thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Combination of Electrodeposition and Transfer Processes for Flexible Thin-Film Thermoelectric Generators

et al. 2018

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Abstract:To reduce consumption for ambient assisted living (AAL) applications, we propose the design and fabrication of flexible thin-film thermoelectric generators at a low manufacturing cost. The generators were fabricated using a combination of electrodeposition and transfer processes. N-type Bi 2 Te 3 films and p-type Sb 2 Te 3 films were formed on a stainless-steel substrate employing potentiostatic electrodeposition using a nitric acid-based bath, followed by a transfer process. Three types of flexible thin-film thermoelectric generators were fabricated. The open circuit voltage (V oc ) and maximum output power (P max ) were measured by applying a temperature difference between the ends of the generator. The thin-film generators obtained using thermoplastic sheets with epoxy resin exhibited a V oc that was tens of millivolts. In particular, the contact resistance of the thin-film generator decreased when silver paste was inserted at the junctions between the n-and p-type films. The most flexible thin-film generator fabricated in this study exhibited a P max of 10.4 nW at a temperature difference of 60 K. The current performance of the generators was too low, but we innovated a combination process to prepare them. It is expected to increase the performance by further decreasing the micro-cracks and contact resistance in the generators.

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“…The thermoelectric efficiency of the current samples is compared with the maximum values reported for p-type PbSe, 32 strontium-added PbS, 40 PbTe, 10 strontium-added PbTe, 6 and PbTe-12 at% PbS 19 and PbTe-16 at% PbS 19 composites with identical dopant concentration in Fig. 5(b).…”

Section: (See Esi †)mentioning

confidence: 99%

“…[2][3][4][5][6][7][8] The search for high performance materials from naturally abundant elements has continued to improve the relatively low conversion efficiency of such materials, which is determined by the figure of merit, zT = S 2 Ts/(k E + k L ), where, S, s, T, k L , and k E are the Seebeck coefficient, electrical conductivity, absolute temperature, and the lattice and electronic components of the thermal conductivity, respectively.…”

Section: Introductionmentioning

confidence: 99%

Chemical composition tuning in quaternary p-type Pb-chalcogenides – a promising strategy for enhanced thermoelectric performance

Yamini

Wang

Gibbs

et al. 2014

Phys. Chem. Chem. Phys.

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Recently a significant improvement in the thermoelectric performance of p-type ternary PbTe-PbSe and PbTe-PbS systems has been realized through alternating the electronic band structure and introducing nano-scale precipitates to bulk materials respectively. However, the quaternary system of PbTe-PbSe-PbS has received less attention. In the current work, we have excluded phase complexity by fabricating single phase sodium doped PbTe, alloyed with PbS up to its solubility limit which is extended to larger concentrations than in the ternary system of PbTe-PbS due to the presence of PbSe. We have presented a thermoelectric efficiency of approximately 1.6 which is superior to ternary PbTe-PbSe and PbTe-PbS at similar carrier concentrations and the binary PbTe, PbSe and PbS alloys. The quaternary system shows a larger Seebeck coefficient than the ternary PbTe-PbSe alloy, indicative of a wider band gap, valence band energy offset and heavier carriers effective mass. In addition, the existence of PbS in the alloy further reduces the lattice thermal conductivity originated from phonon scattering on solute atoms with high contrast atomic mass. Single phase quaternary PbTe-PbSe-PbS alloys are promising thermoelectric materials that provide high performance through adjusting the electronic band structure by regulating chemical composition.

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Strained endotaxial nanostructures with high thermoelectric figure of merit

Cited by 957 publications

References 32 publications

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

Combination of Electrodeposition and Transfer Processes for Flexible Thin-Film Thermoelectric Generators

Chemical composition tuning in quaternary p-type Pb-chalcogenides – a promising strategy for enhanced thermoelectric performance

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