Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

Bour, D. P.; Geels, R.S.; Treat, D.W.; Paoli, T. L.; Ponce, Fernando; Thornton, Russell; Krusor, B. S.; Bringans, R. D.; Welch, David

doi:10.1109/3.283808

Cited by 117 publications

(35 citation statements)

References 48 publications

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“…Fig. 1(top) shows the subthreshold spectrum of an AlGaInPbased laser diode emitting light at 670 nm [12], Fig. 1(center) its net gain curve, and Fig.…”

Section: Introductionmentioning

confidence: 99%

Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

Hofstetter

Faist

1999

IEEE Photon. Technol. Lett.

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Abstract-A new technique for the measurement of semiconductor laser gain and dispersion spectra is presented. The technique is based on an analysis of the subthreshold emission spectrum by Fourier transforms. Applications of this method to AlGaInP-based interband laser diodes and mid-infrared intersubband quantum cascade lasers are discussed. A good agreement between the measured dispersion of the refractive index and tabulated values in the literature was found.

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“…Fig. 1(top) shows the subthreshold spectrum of an AlGaInPbased laser diode emitting light at 670 nm [12], Fig. 1(center) its net gain curve, and Fig.…”

Section: Introductionmentioning

confidence: 99%

Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

Hofstetter

Faist

1999

IEEE Photon. Technol. Lett.

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“…2. Both samples were grown on Si-doped GaAs substrates tilted 10 from the (001) plane in order to insure that the active Ga 0X4 In 0X6 P region is in the zincblende phase and does not exhibit CuPt-type ordering [14]. The active well widths are 125 and 30 # e, both compressively strained by 0.8% at 10 5 Pa and room temperature to match the GaAs substrate.…”

Section: Methodsmentioning

confidence: 99%

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Ritter

Weinstein

Viturro

et al. 1999

phys. stat. sol. (b)

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“…In the gain region, compressively strained Ga x In 1−x P quantum wells (x < 0.52) provide TE-polarised emission from 640-700 nm [62], however at the short wavelength end of this range, the reduction in carrier confinement leads to increased temperature sensitivity. Fig.…”

Section: General Issues Related To Materials and Pumpingmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

Cited by 117 publications

References 48 publications

Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

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