Strained-layer multiple-quantum-well InGaAs/GaAs waveguide modulators operating around 1 mu m

Humbach, O.; Stöhr, A.; Auer, U.; Larkins, E.C.; Ralston, J.D.; Jäger, D.

doi:10.1109/68.185057

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…Physically, the quantum confined Stark effect (QCSE) has been used as the basic interaction mechanism. It has been shown that the fabricated EAM offer high-speed and broadband operation up to 70GHz, chirp control at mm-wave frequencies, high-sensitivity and the prospect for monolithic integration [7,8]. Moreover it should be pointed out, that the electroabsorption simultaneously leads to the generation of photocarriers, i.e.…”

Section: Introductionmentioning

confidence: 99%

Microwave Optical Interaction Devices: From Concept to Applications

Jäger

Heinzelmann

Stöhr

2000

30th European Microwave Conference, 2000

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In this paper, we review our recent work on novel high-speed photonic InP components and their application. In detail, the paper is concerned with ultra broadband travelling-wave photodetectors, high-speed waveguide modulators, as well as novel electroabsorption transceiver elements. Besides the basic device concepts and properties, the employment of the high-speed photonic components in a mm-wave fiber-wireless network is experimentally demonstrated, showing for the first time, full-duplex broadband fiber optic transmission in a point-to-multipoint fiber-ring network. Finally, an EMC optical microwave sensor is also described.

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Section: Introductionmentioning

confidence: 99%

Microwave Optical Interaction Devices: From Concept to Applications

Jäger

Heinzelmann

Stöhr

2000

30th European Microwave Conference, 2000

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“…More recently, InGaAs/GaAs QW waveguide modulators, where light propagates parallel to the QW layer, have also been investigated. 5 Such modulators are particularly interesting for monolithic integration with low threshold strained-layer laser diodes. 6 For high device performance, such as high on/off ratio and a low drive voltage, it is desirable that a large Stark shift of the exciton is exhibited with applied electric field.…”

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confidence: 99%

Electroabsorption enhancement in disordered, strained InGaAs/GaAs quantum well

Micallef

Li²,

Weiss

1995

Applied Physics Letters

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The results of modeling the application of an external electric field to disordered, strained InGaAs/ GaAs single quantum well are presented. An error function profile is used to model the constituent atoms composition after interdiffusion. Results indicate that the exciton Stark shift in the disordered quantum well is greater than in the as-grown 10 nm wide In 0.2 Ga 0.8 As well, and that the change in electroabsorption near the fundamental exciton absorption peak is enhanced by 30% in the disordered quantum well for a 30 kV/cm electric field applied perpendicular to the well. These results may be used to achieve optical modulators with improved performance characteristics in strained quantum well structures.

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InGaAs/GaAs multiple-quantum-well modulators and switches

Stöhr¹,

Humbach

Zumkley

et al. 1993

Opt Quant Electron

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The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multipie-quantum-well (MQW) structures is presented. The absorption and refractive index changes (Delta alpha, Delta n) of Insub0.2Gasub0.8As/ GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit Delta alpha/alpha 0 and Delta n/alpha 0 give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented

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Strained-layer multiple-quantum-well InGaAs/GaAs waveguide modulators operating around 1 mu m

Cited by 9 publications

References 6 publications

Microwave Optical Interaction Devices: From Concept to Applications

Microwave Optical Interaction Devices: From Concept to Applications

Electroabsorption enhancement in disordered, strained InGaAs/GaAs quantum well

InGaAs/GaAs multiple-quantum-well modulators and switches

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