Strained Silicon Nanodevices

Reiche, M.; Moutanabbir, Oussama; Hoentschel, J.; Hähnel, Angelika; Flachowsky, S.; Gösele, U.; Horstmann, Μ.

doi:10.1002/9783527639540.ch6

Cited by 1 publication

(1 citation statement)

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“…It is generally known that strain modifies the band structure of silicon and carrier mobility by (i) the reduction of the carrier effective mass and (ii) by reduction of the intervalley phonon scattering rates. [26][27][28] For p-type material analyzed here, the potential barrier induced by the tensile strain generates the confinement of electrons along the dislocation line. 29 This is combined with changes of the electron effective masses and a reduction of the electron scattering due to conduction valley splitting, which lowers the rate of intervalley phonon scattering.…”

Section: Discussionmentioning

confidence: 99%

On the electronic properties of a single dislocation

Reiche

Kittler

Erfurth

et al. 2014

Journal of Applied Physics

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A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm 2 , the current density through a single dislocation is J ¼ 3.8 Â 10 12 A/cm 2 corresponding to a resistivity of q ffi 1 Â 10 À8 X cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.

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