Strained silicon NMOS with nickel-silicide metal gate

Abstract

Strained Si NMOS transistors with Lgate down to 3Snm were fabricated using Nisi as a metal gate electrode material for the first time. Compared to poly gate devices, Nisi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

“…More precisely the energy in (12) is an elliptic function of k = (k x , k y ), but the principal axes of the ellipse are not aligned with the k x and k y directions of the DCS, unless the second term in the brackets of (12) is null. From (12) it is easy to determine the principal axes of the ellipse (which define the ellipse coordinate system, EpCS, defined in Fig. 2(d)), and the effective masses m p,t , m p,l in the EpCS, which are hereafter denoted effective masses in the transport plane or simply transport masses.…”

“…However strained-Si (s-Si) technologies have already demonstrated on current enhancements of 20% to 30% for sub-50nm channel lengths [12][13][14], in fact a correlation between the mobility and I DS improvements has been predicted by means of simple flux-theory arguments [15], confirmed by numerical simulations [16][17][18][19][20], as well as observed in the experiments [12-14, 21, 22]. The on-current enhancements achieved with the strain engineering have been so remarkable that the strain has sometimes replaced rather than simply augmented the geometrical scaling, as it can be seen in Fig.…”

Metrology (including Materials Characterization) for Nanoelectronics

“…The first high volume ICs with channel engineering appeared at the 90 nm node [14][15][16][17][18]. a variety of processes were used to improve electron and hole mobility.…”

“…In the future, carrier mobility improvements may be achieved through the use of metal gates (that induce channel strain) [18], strained silicon substrates, or germanium channels. Strained silicon on top of the SiGe or strained silicon on insulator (sSOI) are actively being researched as substrate alternatives.…”

A novel split-gate MOSFET design realized by a fully silicided gate process for the improvement of transconductance and output resistance

“…Mono-nickel-silicide (NiSi) is a promising metal gate candidate in the CMOS technology [6], and its work function can be modified through dopant segregation effects at the oxide interface [7]- [9]. Antimony implantation in the polysilicon gate prior to gate silicidation was reported to reduce the NiSi work function [8], [9].…”