2019
DOI: 10.1364/ol.44.004215
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Strategic measurement for the axis orientation and electro-optic coefficient of BaTiO3 crystal thin film grown on MgO crystal with polarization modulations

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Cited by 10 publications
(5 citation statements)
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“…As the key advantages of ferroelectric material, the c-axis oriented BaTiO 3 crystal thin film has a much higher EO coefficient r 51 [25,26]. Figure 1(a) shows a schematic vision of several BaTiO 3 crystal refractive index distributions, where the grey part stands for the refractive index sphere of the ordinary light (o-light, n o ) and the red part stands for the refractive index ellipsoid of the extraordinary light (e-light, n e ,) and the z-coordinate is the optical axis of this crystal.…”
Section: Theory Of the Pockles Effect Based Refractive Index Modulati...mentioning
confidence: 99%
See 1 more Smart Citation
“…As the key advantages of ferroelectric material, the c-axis oriented BaTiO 3 crystal thin film has a much higher EO coefficient r 51 [25,26]. Figure 1(a) shows a schematic vision of several BaTiO 3 crystal refractive index distributions, where the grey part stands for the refractive index sphere of the ordinary light (o-light, n o ) and the red part stands for the refractive index ellipsoid of the extraordinary light (e-light, n e ,) and the z-coordinate is the optical axis of this crystal.…”
Section: Theory Of the Pockles Effect Based Refractive Index Modulati...mentioning
confidence: 99%
“…As mentioned above, the device under test (DUT) uses the embedded configuration with an embedded depth of S z and an electrode gap of G x . As shown in figure 1(c), a drive voltage V d imposed onto the waveguide creates an electric field E(x, z) within the optical field E opt , and then the interaction efficiency between the E opt and E(x, z) is defined by [25,26]…”
Section: Theory Of the Pockles Effect Based Refractive Index Modulati...mentioning
confidence: 99%
“…1). Thin-film EO modulators of BTO have been demonstrated on silicon [4,7] and other oxide substrates [8,9]. High-quality thin films grown on silicon using the molecular beam epitaxy (MBE) technique on large-scale wafers have been demonstrated for electro-optic applications [4].…”
Section: Introductionmentioning
confidence: 99%
“…[30] In our previous works, we have introduced the accurate methodology for the electro-optical coefficient and manifested the intrinsic dependence of the EO effect on the initial state of crystal film/environment temperature. [31][32][33] Very recently, we discussed the highly efficient EO modulation method-phase-polarization modulation (PPM) for the thin-film caxis BaTiO 3 waveguide-based modulator and also demonstrated the crucial role of the PPM scheme in increasing the slope of optical phase transfer function of an MZI type intensity EO modulator. [34] In this work, we first analyze the dynamic-polarization interference process of a thin-film BaTiO 3 waveguide-based MZI type EO intensity modulator mechanism under the PPM mechanism, investigate the intrinsic relationships between the slope of optical phase transfer function and the electric-to-optical signal energy transition efficiency and clarifies the principle of PPM mechanism to reduce the half-wave voltage (V 𝜋 ).…”
Section: Introductionmentioning
confidence: 99%
“…[ 30 ] In our previous works, we have introduced the accurate methodology for the electro‐optical coefficient and manifested the intrinsic dependence of the EO effect on the initial state of crystal film/environment temperature. [ 31–33 ] Very recently, we discussed the highly efficient EO modulation method‐phase‐polarization modulation (PPM) for the thin‐film c‐axis BaTiO 3 waveguide‐based modulator and also demonstrated the crucial role of the PPM scheme in increasing the slope of optical phase transfer function of an MZI type intensity EO modulator. [ 34 ]…”
Section: Introductionmentioning
confidence: 99%