Strategy for Addressing the Low Quantum Efficiency of Nanowire Photodetectors

Bianconi, Simone; Rabinowitz, Jacob; Kang, Chang‐Mo; Liu, Lining; Rezaei, Mohsen; Nawaz, Haroon; Mohseni, Hooman

doi:10.1021/acsphotonics.2c00029

Cited by 5 publications

(8 citation statements)

References 37 publications

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“…Unlike APDs, there is no need for HPTs to apply high bias voltage for APD operation to achieve high photocurrent gain, and so there is no excess avalanche noise characteristic [208]. In this respect, InP/InGaAs-based SWIR HPTs and FPA imagers with ultrahigh sensitivity have been demonstrated very recently [209,210], making HPT a promising candidate to extend to the MWIR and LWIR. Meanwhile, MWIR and LWIR HPTs based on Sb-T2SLs have been demonstrated by CQD at Northwestern University.…”

Section: High Sensitivity Pds With Internal Gainmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Section: High Sensitivity Pds With Internal Gainmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Similarly, we used this ROIC‐based high throughput measurement approach to study different methods for increasing the quantum efficiency of nano‐photodetectors. [ 27 ] A large number of different device types were fabricated side‐by‐side on a ROIC. Another theoretical model we developed suggested that an array of connected small phototransistors could be more sensitive than a single large device with the same overall area.…”

Section: Photodetector Characterization Based On Roicmentioning

confidence: 99%

“…This effect can hinder imaging and detection performance metrics, such as quantum efficiency. Some solutions to improve the optical absorption rely on stacking thick layers of low‐dimensional materials while maintaining their dimensionality (e.g., solution‐dispersed flakes, [ 26 ] or dense vertical arraying of nanowires [ 27 ] ). In addition, photonics solutions discussed in the later sections could be used for a wide range of materials.…”

Section: Imaging With Low‐dimensional Materialsmentioning

confidence: 99%

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From Material to Cameras: Low‐Dimensional Photodetector Arrays on CMOS

et al. 2023

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The last two decades have witnessed a dramatic increase in research on low‐dimensional material with exceptional optoelectronic properties. While low‐dimensional materials offer exciting new opportunities for imaging, their integration in practical applications has been slow. In fact, most existing reports are based on single‐pixel devices that cannot rival the quantity and quality of information provided by massively parallelized mega‐pixel imagers based on complementary metal‐oxide semiconductor (CMOS) readout electronics. The first goal of this review is to present new opportunities in producing high‐resolution cameras using these new materials. New photodetection methods and materials in the field are presented, and the challenges involved in their integration on CMOS chips for making high‐resolution cameras are discussed. Practical approaches are then presented to address these challenges and methods to integrate low‐dimensional material on CMOS. It is also shown that such integrations could be used for ultra‐low noise and massively parallel testing of new material and devices. The second goal of this review is to present the colossal untapped potential of low‐dimensional material in enabling the next‐generation of low‐cost and high‐performance cameras. It is proposed that low‐dimensional materials have the natural ability to create excellent bio‐inspired artificial imaging systems with unique features such as in‐pixel computing, multi‐band imaging, and curved retinas.

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“…As the number of structures increases, the pixel's total dark current also increases; and our second FPA shows that triple detectors showed a slightly lower operability than double detectors (73.5% vs. 78.0%). Therefore, the appropriate number of structures and their spacing requires optimization to obtain both high operability and sensitivity [26]. In addition, the mechanical pressure and temperature condition of the flip-chip bonding process can also be optimized for submicron pixels, in order to achieve high pixel operability with a minimum number of detector structures.…”

Section: Strategies For Improving the Operability Of Scaled Photodete...mentioning

confidence: 99%

Toward sub-micron pixels for short-wave infrared imaging

Kang¹,

Rabinowitz²,

Bianconi³

et al. 2022

Semicond. Sci. Technol.

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The sensitivity of infrared imagers can be significantly improved by reducing the size of photodetectors down to the diffraction limit. Emerging low-dimensional material enable submicron photodetectors, which can be diffraction limited and lead to significant sensitivity improvement in the critical short-wave infrared band. However, reaching this limit requires pixel sizes smaller than the metal bumps needed for hybridization to silicon readout chips. Such tiny fragile pixels are susceptible to damages due to the mechanical pressure applied during flip-chip bonding, degrading the number of functional camera pixels. Herein, we systematically characterize the influence of the detector size on the imager pixel yield. We then introduce strategies for improving the yield of sub-micron pixels from less than half of total pixels to more than 3/4 of them. While we used a top-down fabrication for our detectors, the developed method is also applicable to bottom-up fabrication methods to make highly sensitive infrared cameras based on emerging low-dimensional material such as catalyst-assisted nanowires.

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Strategy for Addressing the Low Quantum Efficiency of Nanowire Photodetectors

Cited by 5 publications

References 37 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

From Material to Cameras: Low‐Dimensional Photodetector Arrays on CMOS

Toward sub-micron pixels for short-wave infrared imaging

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