2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) 2012
DOI: 10.1109/impact.2012.6420220
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Strategy for TSV scaling with consideration on thermo-mechanical stress and acceptable delay

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Cited by 9 publications
(13 citation statements)
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“…where γ i T and γ i σ are temperature and stress gradients sensitivity in the ith grid with respect to the dummy TSV density, and are given by ∂T i /∂η i and ∂σ i /∂η i determined from (13) and (14), respectively.…”
Section: A Clock-skew Sensitivity With Respect To Dummy Tsv Densitymentioning
confidence: 99%
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“…where γ i T and γ i σ are temperature and stress gradients sensitivity in the ith grid with respect to the dummy TSV density, and are given by ∂T i /∂η i and ∂σ i /∂η i determined from (13) and (14), respectively.…”
Section: A Clock-skew Sensitivity With Respect To Dummy Tsv Densitymentioning
confidence: 99%
“…In this paper, based on recent measurement results in [6], [8], [10], [12], and [13], a nonlinear electrical-thermalmechanical delay model is developed for 3-D clock-tree design. Further, sensitivity analysis is performed for dummy TSV density with respect to reduction of temperature or stress 0278-0070 c 2013 IEEE gradient.…”
mentioning
confidence: 99%
“…The mechanical stress from TSVs also affects the carrier mobilities of drivers on the substrate. Based on the alignment of the transistors and the amount of exerted stress, the carrier mobility varies [74,105,106]. This variation in charge carrier mobility adversely affects the delay of drivers.…”
Section: Mechanical Modelmentioning
confidence: 99%
“…This variation in charge carrier mobility adversely affects the delay of drivers. Variation in carrier mobility due to exerted stress [74,105,106] is given by…”
Section: Mechanical Modelmentioning
confidence: 99%
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