Stress analysis in Si membranes for open stencil masks and mini-reticles using double bulging and resonance methods

Degen, A.; Abedinov, N.; Gotszalk, Teodor; Sossna, E.; Kratzenberg, Martin; Rangelow, I. W.

doi:10.1016/s0167-9317(01)00538-x

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…7͒. The comparison of fitted, geometrical and measured with reference plane plate zero levels, provided in previous experiments, 4 has shown the perfect coincidence of all these values and it opens the possibility to use such a comparison for fine tuning diffraction image optics. The stress measured in the 4.53 m thick pn membrane was 1.2 MPa and was determined within an accuracy of 0.1 MPa.…”

Section: Stress Determination With the Double Bulging Methodssupporting

confidence: 53%

“…The data collected in the experiment will be fitted by means of an improved least square fit. 4 The use of this method allowed us to get better resolution from the fitting and less scattering of the measured values, the latter due to outer local air pressure variations. Applied in the region of higher pressure, where the elastic term contributes greatly to Eq.…”

Section: Stress Determination With the Double Bulging Methodsmentioning

confidence: 99%

“…By combining such a relative thickness data evaluation with ellipsometric ͑IR-VASE͒ point-wise absolute thickness measurements, very sensitive precise mapping of the membrane thickness variation can be made. The stress was measured with the double bulging technique ͑deflecting the membrane in both directions͒, 4 which is based on the well known bulging method. It allowed us to increase the measurement accuracy ͑Ͻ0.1 MPa͒ of the method and to investigate low stress membranes ͑Ͻ2 MPa͒.…”

Section: Introductionmentioning

confidence: 99%

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Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Sossna

Degen

Rangelow

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Sossna, E.; Degen, A.; Rangelow, I. W.; Drzik, M.; Hudek, P.; Tiwald, T. E.; and Woollam, John A., "Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks" (2001 Silicon membranes are used for stencil masks which are key to charged particle projection lithography, particularly for ion projection lithography, electron beam projection. Quantitative and qualitative determination of the mechanical properties of the true thickness, thickness variations ͑morphology͒, electrical conductivity and stress is critical to the development of next generation lithography. The metrology setup includes high accuracy thickness, refractive index and electrical conductivity measurement based on infrared variable angle spectroscopic ellipsometry, thickness variation characterization based on the Fizeau interferometric scheme and mechanical stress evaluation based on a novel double bulging technique.

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Section: Stress Determination With the Double Bulging Methodssupporting

confidence: 53%

Section: Stress Determination With the Double Bulging Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Sossna

Degen

Rangelow

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…This fit function is commonly used in the membrane bulging method for characterizing the elastic properties. 11 Our breaking mechanism usually works at deflections of about 15 m corresponding to about 20 mN. At forces in the range of 250-500 mN ͑estimated from that fit͒ …”

Section: Mechanical Control Systemmentioning

confidence: 99%

Nanofabricated adjustable multicontact devices on membranes

Waitz

Schecker

Scheer

2008

Review of Scientific Instruments

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Adjustable atomic size contacts realized by break junctions have become a standard tool during the last decade. Although nanofabricated break junctions may in principle be incorporated onto complex electronic circuits, a fundamental drawback of the standard break junction technique is its limitation to a single adjustable junction per device. We have fabricated single break junctions as well as devices containing two break junctions on a silicon membrane. The junctions are adjusted by positioning a fine tip via piezocontrol on the rear side of the membrane. We describe the fabrication process of the membranes and the devices and present results obtained on circuits made of gold and platinum. We show that the junctions can be addressed independently by a suitable choice of the tip position. Single-atom contacts, vacuum tunneling contacts as well as larger contacts can be stabilized.

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Nanofabrication by shadow deposition through nanostencils

Brugger

Kim²

2005

Nanolithography and Patterning Techniques in Microelectronics

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Stress analysis in Si membranes for open stencil masks and mini-reticles using double bulging and resonance methods

Cited by 4 publications

References 8 publications

Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Nanofabricated adjustable multicontact devices on membranes

Nanofabrication by shadow deposition through nanostencils

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