Stress analysis of silicon membranes with electroplated permalloy films using Raman scattering

Cho, H.J.; Oh, Kyungsuk; Ahn, Chi‐Hyung; Boolchand, P.; Nam, Tae-Chul

doi:10.1109/20.951295

Cited by 28 publications

(17 citation statements)

References 5 publications

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“…As shown in Figure 2a, without external strain, a Raman peak of 269.72 cm −1 was observed on the substrate, which has a Raman shift of 2.72 cm −1 with the intrinsic GaAs Raman peak. It means that there is residual stress on the sample surface from the calculation of the stress on GaAs [12]:…”

Section: Resultsmentioning

confidence: 99%

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Guo

Liu

et al. 2013

Nanoscale Res Lett

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As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

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Section: Resultsmentioning

confidence: 99%

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Guo

Liu

et al. 2013

Nanoscale Res Lett

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“…The Raman spectrum was used to calculate the residual stress after the optimization by the super lattice structure. The residual stress acting is best expressed as follow:

where σ is the residual stress and Δω is the wave number shift [ 16 ].…”

Section: Resultsmentioning

confidence: 99%

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Shi

Guo²,

et al. 2012

Materials

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Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.

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“…Cho et al [173] also applied µRS to characterize the stress of a silicon membrane (fabricated via KOH etch) with electroplating permalloy films for magnetic actuator applications. Gogotsi et al [174] using µRS to characterize the phase transformation and stress generation during wafer cutting and polishing processes.…”

Section: Raman Spectroscopymentioning

confidence: 98%

Techniques in Residual Stress Measurement for MEMS and Their Applications

Chen

Mems/Nems

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This chapter mainly focuses on the introduction of residual stress characterization of MEMS materials. The origin and classification of residual stress appearing in thin films and MEMS structures are firstly introduced and the essential background of necessary mechanics, which is utilized to convert the measured data into the final residual stress, is followed. Various types of residual stress characterization techniques conducted in MEMS scale are subsequently addressed and reviewed. Finally, a brief discuss on controlling residual stresses and on taking the advantage of residual stress in MEMS applications is briefly discussed.

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Stress analysis of silicon membranes with electroplated permalloy films using Raman scattering

Cited by 28 publications

References 5 publications

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Techniques in Residual Stress Measurement for MEMS and Their Applications

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