Stress analysis, structure and magnetic properties of sputter deposited Ni–Mn–Ga ferromagnetic shape memory thin films

Annadurai, A.; Raja, M. Manivel; Prabahar, K.; Kumar, Abhishek; Kannan, M.D.; Jayakumar, S.

doi:10.1016/j.jmmm.2011.06.017

Cited by 12 publications

(8 citation statements)

References 31 publications

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“…In addition, thermal stress is generated through the heat treatment process. Previous research reports that the compressive or tensile stress acts according to the difference in the thermal expansion coefficient of the substrate and the thin film . In the case of the Corning Eagle XG glass, the thermal expansion coefficient is 3.7 × 10 −6 /°C, which is smaller than the thermal expansion coefficient of the ITO thin film (7.6 × 10 −6 /°C).…”

Section: Resultsmentioning

confidence: 99%

A Study on Transparent Electrode Properties of Indium Tin Oxide Thin Films Deposited From Recycled Target

Lee

Park

et al. 2020

Bulletin Korean Chem Soc

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In this study, we investigated the transparent electrode and mechanical properties of indium tin oxide (ITO) thin films deposited from recycled targets of In2O3 (90 wt %) and SnO3 (10 wt %). We also evaluated the effect of their heat treatment at different temperatures. The ITO thin film deposited on the glass substrate at ambient temperature exhibited microcrystallization characteristics in which the amorphous state was incorporated. When the annealing temperature was over 200 °C, the ITO thin film showed stable transparent electrode characteristics with a sheet resistance value of 7.2 Ω/sq and high transmittance of more than 85% in the visible light region through recovery and recrystallization. Under compressive stress, the ITO thin film exhibited stable elastic modulus and hardness values of more than 110 GPa and 6.0 GPa, respectively. It is anticipated that these outcomes will meet the electrical, optical, and mechanical property requirements for commercial ITO transparent electrodes.

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Section: Resultsmentioning

confidence: 99%

A Study on Transparent Electrode Properties of Indium Tin Oxide Thin Films Deposited From Recycled Target

Lee

Park

et al. 2020

Bulletin Korean Chem Soc

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“…50 Atom pinning in the lattice during film deposition at higher sputtering power causes compressive stress in the film, as reported in the literature. 37 The FWHM and intensity of the peaks differed for the annealed film compared with the as-deposited film. These results reveal that the internal stress of the film is released after annealing.…”

Section: Structural Analysismentioning

confidence: 98%

“…37,50,51 The position of the (220) fundamental reflection peak (Figs. 1 and 2) shifted towards higher 2h value, indicating a decrease in interatomic spacing.…”

Section: Structural Analysismentioning

confidence: 99%

“…However, thin films deposited on silicon substrates often contain residual stress, affecting the crystallinity, formation of martensitic twins, and magnetic properties. [35][36][37] In addition, the substrate type, sputtering power, argon pressure, and temperature during deposition play a vital role in determining the film properties. Subsequent postannealing also influences the phase structure, magnetic ordering, and grain growth, which determine the ferromagnetic and shapememory properties.…”

Section: Introductionmentioning

confidence: 99%

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Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

Kumar

Seenithurai

Raja

et al. 2015

Journal of Elec Materi

Self Cite

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Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni 50.2 Mn 30.6 Ga 19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L2 1 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm 3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

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“…The character of the ρ (T) dependence is caused by the scattering of charge carriers on lattice defects (impurity atoms or atomic disorder), phonons (lattice vibrations) and by spin disorder. The phonon contribution increases with increasing temperature and is proportional to T at high temperature [34][35][36][37][38]. In magnetic materials, there is a large contribution to the resistivity due to spin disorder.…”

Section: Intermartensitic Transformationmentioning

confidence: 99%

Intermartensitic Transformation in Ni54.8Mn23.2Ga21.7 Ferromagnetic Shape Memory Alloy Nano Powder

Nirmala¹,

K²,

Amuthan³

et al. 2012

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The Ni-Mn-Ga Ferromagnetic shape memory alloys are becoming an important element of sensor and actuator materials due to their large magnetic-field-induced strain and shape memory effect in recent years. The martensitic transformation temperature of the Heusler alloy system has been intensively studied. The Ni 54.8 Mn 23.2 Ga 21.7 irregular agglomerated nanoparticles were prepared by ball milling method, and characterized by x-ray diffraction, differential scanning calorimetry and transmission electron microscopy techniques. These particles reveal a disordered non modulated face centered tetragonal structure. For the first time, nanopowder has been found to undergo a sequence of temperature-induced intermartensitic transformation in addition to the martensitic transformation on cooling. It is believed that relaxation of internal stresses is the main issue in this case. The resistivity of the material has been measured on cooling from 450 K to 300 K. It is observed that the resistivity is maximum in the nano crystalline state and it decreases substantially with decrease of the temperature. Both amorphous and nanocrystalline material coexisted in the ball-milled sample, such a nanomagnetic structure is considered to be ideal for soft nanomagnetic material.

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Stress analysis, structure and magnetic properties of sputter deposited Ni–Mn–Ga ferromagnetic shape memory thin films

Cited by 12 publications

References 31 publications

A Study on Transparent Electrode Properties of Indium Tin Oxide Thin Films Deposited From Recycled Target

A Study on Transparent Electrode Properties of Indium Tin Oxide Thin Films Deposited From Recycled Target

Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

Intermartensitic Transformation in Ni54.8Mn23.2Ga21.7 Ferromagnetic Shape Memory Alloy Nano Powder

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