Stress dependent silylation model and two-dimensional profile simulation

Abstract

Partially hydrogenated poly(vinyl phenol) based photoresist for near UV, high aspect ratio micromachining Effect of Ar addition to an O 2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O 2 /Ar mixture plasma modeling and photoresist etching A new model for polymer silylation is proposed that takes into account three mechanisms: The relaxation of the polymer during silylation, a diffusivity of the silylating agent which increases with resist matrix expansion, as well as a local reaction rate retardation due to stress induced by resist swelling. These mechanisms capture changes in profile shape during silylation. The resulting nonlinear differential equations are solved two-dimensional ͑2D͒ using the finite element method and the influence of the main parameters is studied as a function of feature size and feature type, illustrating the effects of initial aerial image and processing conditions on the final resist image. The simulation profiles reproduce the silylation depth reduction with feature size and abrupt encroachment heretofore unexplained in various experimental studies.

Θεωρητική Και Πειραματική Μελέτη Μηχανισμών Διάχυσης - Αντίδρασης Και Σχηματισμού Αδιάλυτου Πλέγματος Σε Ρητίνες Ηλεκτρονικής Λιθογραφίας

“…Με αφετηρία την ερμηνεία των φαινομένων μεταβολής του πλάτους των γραμμών σε ρητίνη εξαιτίας της καθυστέρησης μεταξύ έκθεσης και θέρμανσης μετά την έκθεση κατασκευάστηκαν οι διεπιφάνειες των σχημάτων 7.12,7.13 , ώστε να προσομοιωθεί το φαινόμενο και οι συνέπειες της καθυστέρησης μεταξύ έκθεσης και ΘΜΕ . [Pierrat C., 1992], [Hartney Μ.Α., 1993], [Weib Μ., 1996], [Zuniga M.A., 1997].…”