Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Lee, M.H.; Hsu, Shu-Shong; Shen, Jiaying; Liu, C.

doi:10.1016/j.mee.2015.02.020

Cited by 19 publications

(5 citation statements)

References 15 publications

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“…Moreover, also device failure due to crack formation has been predicted by a finite element method (FEM). The FEM simulations have been used for flexible IGZO TFTs to identify device areas prone to stress localization under tensile and compressive bending 219 or simulate the strain of a PVP/Al 2 O 3 hybrid gate dielectric. 152 Finally, the mechanical stress induced in IGZO TFTs roll-transferred onto a flexible PDMS substrate has also been calculated by Sharma et al 205 b.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

562

430

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Section: Mechanical Propertiesmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

562

430

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“…Operation of flexible transparent ZnO TFTs often involves the mechanical deforming of substrate, so the understanding of the evolution of device performance under stress is of fundamental importance for conducting the research in this area. [184,185] In fact, the requirements for flexibilities of devices are quite different when they are used in different areas. In the case of flexible display, the device may need a large strain tolerance when it was rolled up like a scroll.…”

Section: Bending Effect On Flexible Tftmentioning

confidence: 99%

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

et al. 2017

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Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide (ZnO) and related materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performance, together with low processing temperature and good optical transparency.In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and related materials.After a brief introduction, the main progresses on the preparationof each component (substrate, electrodes, channel and dielectrics) are summarized and discussed. Then, the effect of mechanical bending on electrical performance was highlighted. Finally, we suggest the challenges and opportunities infuture investigations.

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“…In addition, actual LTPS TFT products are considered to have a biaxial bending behaviour when applied. Previous studies [6][7] have reported strain distributions for uniaxial bending, where the inverted co-face with SiOx is least stressed for mechanical rolling and extreme local stresses can also induce film cracking or peeling at the corners. More significant degradation occurs when the TFT is bent biaxially and becomes greater with increasing bending.…”

Section: Introductionmentioning

confidence: 99%

Strain distribution and electrical characteristics of flexible low-temperature polysilicon thin film transistors under biaxial bending

Fang

Huang

Xie

et al. 2022

J. Phys.: Conf. Ser.

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This paper investigates the strain distribution of flexible p-channel low temperature polycrystalline silicon thin film transistors under biaxial bending. The strain distribution of LTPS TFTs under different bending conditions is analysed by finite element analysis. 𝛆r and 𝛆θ are essentially equal and constant within the load ring. The finite element analysis shows that when the biaxial bending strain condition is 2.5%, the strain distribution is mainly concentrated at the contact angle between the electrode and the oxide layer. This strain is significantly greater than the overall strain of the device, which is the main reason for the bending performance of the device. We found that under biaxial bending, the threshold voltage shifts towards the negative axis as the biaxial strain increases. Within this strain range, these electrical properties are evident under biaxial strain conditions. Comparing theoretical threshold voltage shifts based on energy band changes with experimental results under biaxial strain, it was found that changes in trap density should also contribute to the threshold voltage shift.

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Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Cited by 19 publications

References 15 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Strain distribution and electrical characteristics of flexible low-temperature polysilicon thin film transistors under biaxial bending

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