Stress effect in Au-Si Schottky diode doped with Cu

Abstract

The stress effect in Au-Si Schottky diodes doped with copper was examined by photoelectric measurement under localized anisotropic stress of the order of 109 dyn/cm2. It was found out that the current increase with stress was due to the changes of both the shunt resistance and the effective Richardson constant of a Schottky diode. The changes of these diode parameters with stress are attributed to the multiplication of the residual lattice strain in silicon due to copper introduction. The lattice strain produces a strain-induced level at 0.160 eV from the conduction band edge. We can infer that a tunneling current component through the potential barrier via this strain-induced level increases with stress. To obtain a highly stress-sensitive diode, the lattice strain of the order of 0.9–1.2×10−4 must be introduced previously into the surface of silicon by the choice of a proper copper diffusion condition.

Cavity ringdown laser absorption spectroscopy and time-of-flight mass spectroscopy of jet-cooled gold silicides

“…In particular, the electronic properties of gold-silicon compounds and interfaces have been studied, 1 including the measurement of Schottky diode barrier behavior in copper doped Au-Si films. 2 Evidence for the existence of metastable Au-Si structures at gold-silicon interfaces has also been obtained. 3 In one high resolution TEM study, spherical Au-Si nanoclusters were observed under certain annealing conditions.…”