Stress Effects on Self-Aligned Silicon Nanowire Junctionless Field-Effect Transistors

Huang, Chien-Jung; Yang, Chen-Chen; Hsueh, Chun-Yuan; Lee, J. H.; Chang, Yi-Tsung; Lee, S. C.

doi:10.1109/led.2011.2159772

Cited by 5 publications

(4 citation statements)

References 8 publications

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“…Nevertheless, the electrical conductance of Si nanowires, using the dynamic properties of surface state, varies with time, which is not a desirable property for practical strain sensing applications. Additionally, in contrast to the results of He and Yang, the piezoresistive effect in both bottom-up grown Si nanowires 15,16 , and top-down fabricated Si [17][18][19] reported recently, did not show significant improvement in sensitivity compared to when bulk materials are used. In another study, Nakamura et al theoretically investigated the influence of the quantum confinement on the piezorea) Electronic mail: hoangphuong.phan@griffithuni.edu.au sistive effect in ultra narrow Si nanowires 20 .…”

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confidence: 99%

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Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM)1-4 . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 . Among several methods to detect strain, the piezoresistive effect in semiconductors has been widely adopted due to its high sensitivity and simple readout circuitry 7-10 . Recent studies have been focusing on enhancing the sensitivity of piezoresistive strain sensors by down-scaling piezoresistive elements to a nanometer scale 11 . He and Yang reported a giant longitudinal piezoresistive coefficient of −3550 × 10 −11 Pa −1 in silicon nanowires, which is at least one order of magnitude large than that of bulk Si material 12 . The enhancement of the piezoresistive effect in Si nanowires was hypothesized to be caused by a piezopinch phenomenon 13 . Following the work of He and Yang, a large number of studies have been carried out to investigate the piezoresistive effect of nanowires fabricated using different methods and aligned in several crystallographic orientations. Milner et al. reported the giant piezoresistive effect in Si micro and nano wires fabricated using a topdown process 14 . In addition, the authors also counteracted the hypothesis of the piezopinch phenomenon, and suggested that the dynamic properties of surface charge on micro/nanowires could be the main reason causing the significant change in the piezoresistance of nanowires 11,14 . Nevertheless, the electrical conductance of Si nanowires, using the dynamic properties of surface state, varies with time, which is not a desirable property for practical strain sensing applications. Additionally, in contrast to the results of He and Yang, the piezoresistive effect in both bottom-up grown Si nanowires 15,16 , and top-down fabricated Si 17-19reported recently, did not show significant improvement in sensitivity compared to when bulk materials are used. In another study, Nakamura et al. theoretically investigated the influenc...

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confidence: 99%

contrasting

confidence: 87%

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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“…Figure 7 clearly demonstrates that the change in S caused by applied strain is decreased with decreasing T ox , further implying that the giant PZR effect could be suppressed for a thinner gate oxide. A similar example for JNTs with the same intrinsic D it of around 1.1 × 10 12 cm −2 eV −1 , corresponding to S = 100 mV/decade at an equivalent gate oxide thickness of around 4 nm, has previously been reported [24]. The reported S results at T ox = 4 nm for a tensile strain of 600 µε (around 100 MPa) or a compressive strain of −600 µε (around −100 MPa) also appear to be consistent with the calculation in figure 7, further suggesting that the increase in T ox appears to be more sensitive to the change of the PZR effect.…”

Section: A New Prospect For Jntssupporting

confidence: 73%

“…Calculated S as a function of the gate oxide thickness T ox for unstrained and strained JNTs. The experimental data of unstrained and strained JNTs reported in[24] are also shown for comparison.…”

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confidence: 99%

The piezoresistive effect inn-type junctionless silicon nanowire transistors

Kang

2012

Nanotechnology

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The piezoresistive effect in n-type silicon nanowires on silicon-on-insulator wafers, also called junctionless nanowire transistors (JNTs), is investigated. A marked change in the subthreshold drain current for strained JNTs is observed. This change can be attributed to strain-induced interface state modification, due to an increase in the interface state for tensile strain or a decrease in the trap activation energy for compressive strain. Through many long-time cycles of compressive and released strain, the electromechanical response of subthreshold I(DS) with time is found, thus supporting the widely reported giant piezoresistance effect. In addition, JNTs involving a back-gate and an additional top-gate electrode may become a new prospect for high-precision sensor applications and next-generation multigate transistors.

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Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain

Huang

Yang

Hsueh

et al. 2012

IEEE Electron Device Lett.

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Stress Effects on Self-Aligned Silicon Nanowire Junctionless Field-Effect Transistors

Cited by 5 publications

References 8 publications

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

The piezoresistive effect inn-type junctionless silicon nanowire transistors

Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain

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