The hydrogenated amorphous silicon thin film solar cell fabricated on the glass substrate patterned by hexagonal nanocylinder array prepared by self-assembled SiO2 nanoparticles and nanosphere lithography was investigated. It is demonstrated that the short-circuit current of the patterned solar cell with 65 nm depth nanocylinder increases from 12.3 to 14.4 mA/cm2, and the efficiency increases from 5.18% to 6.59% as compared to the flat solar cell. These phenomena suggest that both effective light trapping and localized surface plasmon lead to significant improvement of light absorption in amorphous silicon solar cells.

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The authors report a pixel structure for active-matrix organic light-emitting diode ͑OLED͒ displays that has a hydrogenated amorphous silicon solar cell inserted between the driving polycrystalline Si thin-film transistor and the pixel OLED. Such an active-matrix OLED pixel structure not only exhibits a reduced reflection ͑and thus improved contrast͒ compared to conventional OLEDs but also is capable of recycling both incident photon energies and internally generated OLED radiation. Such a feature of energy recycling may be of use for portable/mobile electronics, which are particularly power aware.

The heavily doped n-type silicon nanowire (SiNW) junctionless field-effect transistors (JLFETs) are fabricated using the self-aligned process to control the position and direction of SiNWs. Aligned SiNWs are grown across the prepatterned source and drain under the assistance of the externally applied electric field, which facilitates the subsequent device fabrication. The JLFET exhibits an electron mobility of ∼ 90 cm 2 /V · s, an on/off ratio of ∼ 10 7 , and a subthreshold slope of ∼100 mV/dec. Furthermore, the current variation under stress is investigated. It is shown that stress-induced current change reaches maximum when the JLFET is operated in pinchoff condition. Finally, improvement of OFF current by 98% and subthreshold swing by 15% using compressive stress of 100 MPa in the n-type JLFET is achieved.Index Terms-Junctionless field-effect transistor (JLFET), selfaligned process, silicon nanowires (SiNWs), strained silicon.