2005
DOI: 10.1063/1.1858062
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Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures

Abstract: The stress evolution during and after dc magnetron sputter deposition of Cu thin films with thicknesses of 20 and 300 nm and deposited with a constant rate of 0.1nm∕s onto Si (100) substrates is studied for various sputtering pressures (0.05–6 Pa). The stress was determined by means of in situ wafer curvature measurements using an optical two-beam deflection method. To correlate the stress evolution with the microstructure development, microstructure investigations were performed by scanning electron microscop… Show more

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Cited by 54 publications
(45 citation statements)
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“…To date, the accumulation of extensive experimen tal data on the physics and technology of thin films has made it possible to formulate some empirical regular ities (predominantly, in the technological aspect) of the generation of internal stresses in thin films [1][2][3][4]. In particular, the decisive factor in such processes is the rate of condensation.…”
Section: Introductionmentioning
confidence: 99%
“…To date, the accumulation of extensive experimen tal data on the physics and technology of thin films has made it possible to formulate some empirical regular ities (predominantly, in the technological aspect) of the generation of internal stresses in thin films [1][2][3][4]. In particular, the decisive factor in such processes is the rate of condensation.…”
Section: Introductionmentioning
confidence: 99%
“…The increase of compressive stress during the postcoalescence process has been widely reported. 28,29 It has been attributed to capillaryinduced growth stress due to the smaller lattice parameter of the nanoislands with respect to equilibrium. 14 In addition, the effect of the increase in the surface chemical potential caused by the deposition of atoms from the vapor has been pointed out, which induces atoms to flow into the grain boundaries.…”
Section: B Gold-film-induced Cantilever Strainmentioning
confidence: 99%
“…11 Many investigations have used magnetron sputtering for preparation of Cu films 12,13 as well. In this research, reactive radio frequency (RF) magnetron sputtering was used to prepare Cu and Cu oxide films with various oxygen ratios in the sputtering gas.…”
mentioning
confidence: 99%