Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal

Ganchenkova, Maria; Nicolaysen, S.; Borodin, V.A.; Halvorsen, Einar; Nieminen, Risto M.

doi:10.1016/j.mseb.2006.07.006

Cited by 7 publications

(3 citation statements)

References 26 publications

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“…In contrast to vacancies, already a divacancy moves in silicon relatively slow (with the migration energy of ∼1.2 eV), 21 while a trivacancy is practically immobile. Once formed, small vacancy clusters cannot move out of the specimen and thus are accumulated inside it.…”

Section: The Secondary Damage Kineticsmentioning

confidence: 97%

Synergetic effects of dual-beam implantation on the microstructural development in silicon

et al. 2011

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We report a synergy effect on the microstructural development of silicon specimens as a result of dual-beam high temperature irradiation/implantation. In situ transmission electron microscopy experiments using two different experimental setups have been used, where the primary 50 keV Co+ ion implantation beam was supplemented with either a 300 keV electron beam or a 500 keV Si+ ion beam. In both cases, the secondary beam intensity was such that both beams created comparable overall primary damage. Completely different microstructural response has been found in these two cases. An intensive electron irradiation was found to sharply accelerate the evolution of dislocation structure, only weakly affecting the disilicide kinetics. On the contrary, the Si ion beam weakly affected the kinetics of either dislocation loops or coherent CoSi2 precipitates, but drastically increased the number density of thermodynamically unstable semicoherent precipitates. Possible microstructural reasons for the observed effects and the implications for both dislocation loop and cobalt disilicide nucleation mechanisms in high-temperature implanted TEM samples are discussed and supported by detailed molecular dynamics calculations of annealing of cascade remnants produced by the energetic silicon recoils

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Section: The Secondary Damage Kineticsmentioning

confidence: 97%

Synergetic effects of dual-beam implantation on the microstructural development in silicon

et al. 2011

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“…Moreover, in addition to energy based reasons, the dissociation of the complex can be hindered by the presence of a kinetic barrier for divacancy dissociation, similar to that predicted for divacancies in silicon bulk. 15 The kinetic barrier results from the instability of a vacancy pair at the 2nn separation, which leads to spontaneous transformation of such a pair back into the compact divacancy configuration.…”

Section: Phosphorus Atoms and Point Defects In Siliconmentioning

confidence: 99%

Sensitivity of CoSi2 precipitation in silicon to extra-low dopant concentrations. II. First-principles calculations

Бородин

Ganchenkova

Ruault

et al. 2015

Journal of Applied Physics

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The paper is the second part of the study on the influence of very low dopant content in silicon on CoSi 2 precipitation during high-temperature cobalt ion implantation into transmission electron microscope samples. It deals with the computational justification of various assumptions used in Paper I when rationalizing the kinetics of cobalt clustering in ion-implanted intrinsic silicon (both undoped and containing low concentrations of phosphorus atoms). In particular, it is proven that divacancies are efficient nucleation centers for the new Co-Si phase. It is shown that the capture of vacancies and divacancies on phosphorus atoms increases their lifetime in silicon matrix, but practically does not affect the mechanism of their interaction with interstitial cobalt atoms. Finally, it is demonstrated that the mobility of phosphorus interstitials at temperatures of our experiment is orders of magnitude higher than might be expected from the published literature data. V C 2015 AIP Publishing LLC. [http://dx.

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“…A relaxação em torno da vacância, para os dois diâmetros calculados,é bastante influenciada pelo confinamento e pela distância vacância-vacância. Esses efeitos indu- zem uma anisotropia na tensão perpendicular e paralela ao crescimento do fio [153,156,157]. Para a distância vacância-vacância de 7.7…”

Section: Vacâncias Em Nanofios De Siunclassified

Materiais nanoestruturados do tipo IV e III-V dopados com Mn

Junior¹,

Teodoro²

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Ao Professor Adalberto Fazzio pelo incentivo, pelas discussões sobre o trabalho e pelos longos churrascos em sua casa. Não poderia deixar de agradecê-lo por vários ensinamentos que em muito superam a orientação e que, sem dúvida serãoúteis em minha vida. Ao prof. Antônio José Roque pelos ensinamentos, pela amizade e pela disponibilidade. Aos professores Gustavo M. Dalpian, Tomé M. Schmidt, Pedro P. Venezuela e Alex Antonelli pela colaboração. Aos colegas e amigos do Instituto de Física da USP, pela acolhida e amizade, em especialà Luana por ter feito uma leitura rápida da tese e me ajudado em algumas correções. Aos funcionários do Instituto de Física da USP, que me auxiliaram nos processos burocráticos, em especialà Marisa. A FAPESP pelo apoio financeiro durante a realização desse trabalho. Ao CENAPAD-Campinas pelo suporte computacional. Enfim, a todos que de alguma forma contribuíram para a realização desse trabalho.

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Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal

Cited by 7 publications

References 26 publications

Synergetic effects of dual-beam implantation on the microstructural development in silicon

Synergetic effects of dual-beam implantation on the microstructural development in silicon

Sensitivity of CoSi2 precipitation in silicon to extra-low dopant concentrations. II. First-principles calculations

Materiais nanoestruturados do tipo IV e III-V dopados com Mn

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