Stress-induced leakage current and random telegraph signal

Abstract

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A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

“…Array test circuits have also been proposed to measure the small current of DUTs, such as leakage current across capacitors and p-n junction leakage current. [22][23][24][25][26][27][28] Using them, the leakage current of DUTs can be measured for statistical evaluation of the electrical characteristics such as stress-induced leakage current (SILC) of MOSFETs. Toward evaluation of emerging memory materials with high versatility, an array test circuit platform for measuring the resistance of memory materials has been proposed where DUTs are formed on the platform circuit in an additional process with simple steps.…”