Stress-minimized packaging of inertial sensors using wire bonding

Schröder, Stephan; Nafari, Alexandra; Persson, Katarina; Westby, E.; Fischer, Andreas; Stemme, Göran; Niklaus, Frank; Haasl, Sjoerd

doi:10.1109/transducers.2013.6627179

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…However, the pressure on sensing diagram tend to separate the chip from the substrate and the reliability problem might arise if this design is used in high pressure measurement. Schröder et al [87,88] presented a wire bonding based packaging approach for inertial sensors. The sensor chip was exclusively attached to the package frame by bonded wires on both front and back sides.…”

Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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The field of piezoresistive sensors has been undergoing a significant revolution in terms of design methodology, material technology and micromachining process. However, the temperature dependence of sensor characteristics remains a hurdle to cross. This review focuses on the issues in thermal-performance instability of piezoresistive sensors. Based on the operation fundamental, inducements to the instability are investigated in detail and correspondingly available ameliorative methods are presented. Pros and cons of each improvement approach are also summarized. Though several schemes have been proposed and put into reality with favorable achievements, the schemes featuring simple implementation and excellent compatibility with existing techniques are still emergently demanded to construct a piezoresistive sensor with excellent comprehensive performance.

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Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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“…When the temperature conditions are poor, a high temperature coefficient [13], low linearity [14,15], and temperature drift [16] are extremely common. Therefore, research on high-precision, low-temperature sensitivity MEMS accelerometers has received great attention [17,18,19,20,21,22,23,24]. The temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) are the two main indicators that characterize the effects of thermal phenomena on accelerometers.…”

Section: Introductionmentioning

confidence: 99%

“…J et al obtained a TDB of 179 μg/°C and a TDSF of −9.8 ppm/°C through the design of the structure [19]. S. Schröder et al used a two-sided wire bond method to eliminate the original stress and improved the reliability of the device [20]. Zhang.…”

Section: Introductionmentioning

confidence: 99%

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Zhai

Tao

et al. 2019

Sensors

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High-precision, low-temperature-sensitive microelectromechanical system (MEMS) capacitive accelerometers are widely used in aerospace, automotive, and navigation systems. An analytical study of the temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) for an asymmetric comb capacitive accelerometer is presented in this paper. A five-layer model is established for the equivalent expansion ratio in the TDB and TDSF formulas, and the results calculated by the weighted average of thickness and elasticity modulus method are closest to the results of the numerical simulation. The analytical formulas of TDB and TDSF for an asymmetric structure are obtained. For an asymmetric structure, TDB is only related to thermal deformation and fabrication error. Additionally, half of the fixed electrode distance is not included in the expressions of Δ d and Δ D for asymmetric structures, thus resulting in the TDSF of the asymmetric structure being smaller compared to a symmetric structure with the same structural parameters. The TDSF of the symmetric structure is [−200.2 ppm/°C, −261.6 ppm/°C], while the results of the asymmetric structure are [−11.004 ppm/°C, −72.404 ppm/°C] under the same set of parameters. The parameters of the optimal asymmetric structure are obtained for fabrication guidance using numerical methods. In the experiment, the TDSF and TDB of the packaged structure and the non-packaged structure are compared, and a significant effect of the package on the signal output is found. The TDB is reduced from 3000 to 60 μg/°C, while the TDSF is reduced from 3000 to 140 ppm/°C.

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“…The wire movement due to external acceleration forces changes their capacitance, which can then be measured as the sensor signal. Schröder et al [129] have implemented a novel die attachment method based on wire bonding. In this approach, bond wires are used both as electrical interconnection and as mechanical fixation of the die in order to minimize thermal and mechanical stresses in the package.…”

Section: A) B)mentioning

confidence: 99%

Unconventional applications of wire bonding create opportunities for microsystem integration

Fischer

Korvink

Roxhed

et al. 2013

J. Micromech. Microeng.

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, G. et al. (2013) "Unconventional applications of wire bonding create opportunities for microsystem integration" Journal of Micromechanics and Microengineering, 23(8) Abstract. Automatic wire bonding is a highly mature, cost-efficient and broadly available back-end process, intended to create electrical interconnections in semiconductor chip packaging. Modern production wire bonding tools can bond wires with speeds of up to 30 bonds per second with placement accuracies of better than 2 µm, and the ability to form each wire individually into a desired shape. These features render wire bonding a versatile tool also for integrating wires in applications other than electrical interconnections. Wire bonding has been adapted and used to implement a variety of innovative microstructures. This paper reviews unconventional uses and applications of wire bonding that have been reported in the literature. The used wire bonding techniques and materials are discussed, and the implemented applications are presented. They include the realization and integration of coils, transformers, inductors, antennas, electrodes, through silicon vias (TSVs), plugs, liquid and vacuum seals, plastic fibers, shape memory alloy (SMA) actuators, energy harvesters, and sensors.

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Stress-minimized packaging of inertial sensors using wire bonding

Cited by 6 publications

References 13 publications

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Unconventional applications of wire bonding create opportunities for microsystem integration

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