Stress‐Strain Behavior of Titanium Dioxide (Rutile) Single Crystals

Ashbee, K. H. G.; Smallman, R.E.

doi:10.1111/j.1151-2916.1963.tb19774.x

Cited by 42 publications

(32 citation statements)

References 9 publications

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“…Discontinuities mark the onset of crack initiation and fracture (indicated by black arrows in Figure 3A). [57][58][59] The uniform and reproducible deformation behavior of the particles can also be seen from the EPL index data ( Figure 3B). The onset of particle cracking and fracture (in % arithmetic average) shows an inversed trend: it decreases from an initial value of 38.5%AE3.6% (as-prepared) to 14.6%AE0.8% for anatase and finally to 10.0%AE1.3% for the rutile particles.…”

Section: General Deformation Behaviormentioning

confidence: 59%

“…Compared to macroscopic titania samples, these values are exceptionally high: for the compression of single-crystalline rutile fracture strains of <3% were observed even at elevated temperatures. [57][58][59] The uniform and reproducible deformation behavior of the particles can also be seen from the EPL index data ( Figure 3B). For the different batches, the progression of the EPL index as function of the maximum strain shows the same trend and almost identical values.…”

Section: General Deformation Behaviormentioning

confidence: 84%

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Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

et al. 2017

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The mechanical behavior of nanostructured spherical submicrometer titania particles was studied by in situ uniaxial compression experiments in the scanning and transmission electron microscope (SEM and TEM). Mesoporous and amorphous titania particles were prepared by a wet chemical sol‐gel approach. To obtain nanocrystalline (nc) single‐phase anatase and rutile particles the amorphous particles were crystallized by high‐temperature annealing. For each sample the deformation behavior of at least 50 particles was investigated by in situ compression experiments in the SEM. In all cases an elastic – predominantly plastic deformation behavior accompanied by crack initiation at exceptionally high engineering strain values of several percent were observed. Crack propagation presumably along grain boundaries and a Weibull distributed fracture stress was shown for all nc particles. Complementary in situ TEM experiments and ex situ analysis of focused ion beam prepared particle cross‐sections were carried out to identify the underlying deformation mechanisms. Grain rotations and grain sliding are observed for nc anatase particles during in situ compression and are further identified to be linked to a densification of the mesoporous particle structure. Our dedicated preparation and quantitative in situ characterization methodology provides an excellent basis for a better understanding of the mechanical behavior of advanced ceramics.

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Section: General Deformation Behaviormentioning

confidence: 59%

Section: General Deformation Behaviormentioning

confidence: 84%

Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

et al. 2017

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“…al. [ 16 ] studied the stress-strain relationships for rutile single crystals as a function of crystal orientation and compression axis and found that irrespective of the orientation, the favorable slip system remained {-101} < 101 > and {110} < 001 > , with the former being more favorable than the latter at lower stresses. [ 17 ] They also extensively studied TiO 2 fi lms by transmission electron microscopy (TEM) to characterize different defects.…”

Section: Tem Characterizationmentioning

confidence: 99%

Influence of Line Defects on the Electrical Properties of Single Crystal TiO₂

Adepalli

Kelsch

Merkle

et al. 2012

Adv Funct Materials

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One-dimensional defects are created in [001] and [110] oriented TiO 2 single crystals by uniaxial pressure. Transmission electron microscopy (TEM) characterization shows them to preferably lie on {110} planes. Electrical properties studied as a function of oxygen partial pressure reveal their infl uence on ionic and electronic charge carriers. At high oxygen partial pressures (1 bar-10 − 5 bar) the conductivity due to positive charge carriers is strongly enhanced, e.g., the ionic conductivity is increased by more than two orders of magnitude, when the electrical measurement axis lies on the slip plane. In contrary, no changes are observed when the measurement axis does not lie on the slip planes. At low oxygen partial pressures ( < 10 − 15 bar), irrespective of orientation and presence of dislocation, there is no change in the n-type conductivity. The observed phenomena can be well explained within the space charge model, assuming the dislocation cores to exhibit an excess negative charge (increased titanium vacancy concentration). The present study gives a clear correlation between line defects and point defect concentrations in such an oxide for the fi rst time.

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“…8,9) The mobility of the dislocations, especially, is a crucial issue for controlling the misfit relaxation process through the gliding and climbing of misfit-related dislocations in heteroepitaxial growth. The most energetically preferential slip system in the rutile structure is 101 [101], although the Burgers vectors of [001] and 100 are shorter than that of 101 .…”

Section: Introductionmentioning

confidence: 99%

Defect Structure of Heteroepitaxial SnO₂ Thin Films Grown on TiO₂ Substrates

Wakabayashi

Suzuki

Iwazaki

et al. 2001

Jpn. J. Appl. Phys.

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Heteroepitaxal SnO 2 thin films were grown on rutile (100) TiO 2 single crystal substrates by pulsed laser deposition. The defect structure and surface morphology were investigated by transmission electron microscopy, reflection high-energy electron diffraction, and atomic force microscopy. The misfit-induced large biaxial compressive stress in the 200-nm-thick SnO 2 thin film was almost fully relaxed to yield the high-density interfacial misfit dislocations and related planar defects. The misfit dislocation network on the hetero-interface consisted of two types of partial edge dislocations with Burgers vectors of 1/2 101 and 1/2 110 , which involved {101} and {010} planar defects formed in the film, respectively. The evolution of the surface morphology and cross-sectional structure for thinner films suggested that the introduction of such defects occurs at the early growth stage, due to large lattice misfit, and is strongly affected by point defect condensation.

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Stress‐Strain Behavior of Titanium Dioxide (Rutile) Single Crystals

Cited by 42 publications

References 9 publications

Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

Influence of Line Defects on the Electrical Properties of Single Crystal TiO₂

Defect Structure of Heteroepitaxial SnO₂ Thin Films Grown on TiO₂ Substrates

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Stress‐Strain Behavior of Titanium Dioxide (Rutile) Single Crystals

Cited by 42 publications

References 9 publications

Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

Deformation behavior of nanocrystalline titania particles accessed by complementary in situ electron microscopy techniques

Influence of Line Defects on the Electrical Properties of Single Crystal TiO2

Defect Structure of Heteroepitaxial SnO2 Thin Films Grown on TiO2 Substrates

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Product

Resources

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Influence of Line Defects on the Electrical Properties of Single Crystal TiO₂

Defect Structure of Heteroepitaxial SnO₂ Thin Films Grown on TiO₂ Substrates